TY - JOUR
T1 - Shallow traps for thermally induced hole hopping in DNA
AU - Bixon, M.
AU - Jortner, Joshua
N1 - Funding Information:
This research was supported by the European Grant for Future and Emerging Technologies (IST-2001-38951).
PY - 2006/7/11
Y1 - 2006/7/11
N2 - The theory of thermally induced hopping (TIH) in donor-bridge-acceptor systems for hole transport in DNA duplexes in solution is extended to include energetic theoretical data for the effects of inter-nucleobase interactions. The extended theory incorporates the site specificity of the energetic stabilization of the radical cation of guanine (G), which acts as a resting site for the hole, and of the radical cations of adenine (A), which are accessible by thermal excitation from G+ (Δ = 0.20-0.25 eV). The modified TIH model properly accounts for the flat bridge size dependence of the relative chemical yields for hole transport in G(A-T)nGGG duplexes (n = 4-16). This flat, non-ohmic, bridge length dependence is attributed to an energetic gating mechanism, which is induced by energy barriers (∼0.1 eV) exerted by the proximal and by the terminal edge A groups in the (A)n bridge, while the interior A groups act as shallow traps for the hole. Our 'molecular polaron' model for incoherent, hopping charge transport in solvated DNA is supported by independent theoretical evidence for hole localization induced by intrabase configurational distortions and by polar solvent effects.
AB - The theory of thermally induced hopping (TIH) in donor-bridge-acceptor systems for hole transport in DNA duplexes in solution is extended to include energetic theoretical data for the effects of inter-nucleobase interactions. The extended theory incorporates the site specificity of the energetic stabilization of the radical cation of guanine (G), which acts as a resting site for the hole, and of the radical cations of adenine (A), which are accessible by thermal excitation from G+ (Δ = 0.20-0.25 eV). The modified TIH model properly accounts for the flat bridge size dependence of the relative chemical yields for hole transport in G(A-T)nGGG duplexes (n = 4-16). This flat, non-ohmic, bridge length dependence is attributed to an energetic gating mechanism, which is induced by energy barriers (∼0.1 eV) exerted by the proximal and by the terminal edge A groups in the (A)n bridge, while the interior A groups act as shallow traps for the hole. Our 'molecular polaron' model for incoherent, hopping charge transport in solvated DNA is supported by independent theoretical evidence for hole localization induced by intrabase configurational distortions and by polar solvent effects.
KW - DNA molecular electronics
KW - Long range charge transport
KW - Thermally induced hopping
UR - http://www.scopus.com/inward/record.url?scp=33745510707&partnerID=8YFLogxK
U2 - 10.1016/j.chemphys.2006.01.009
DO - 10.1016/j.chemphys.2006.01.009
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AN - SCOPUS:33745510707
SN - 0301-0104
VL - 326
SP - 252
EP - 258
JO - Chemical Physics
JF - Chemical Physics
IS - 1
ER -