Self-assembled metallic nanowire-based vertical organic field-effect transistor

Ariel J. Ben-Sasson, Daniel Azulai, Hagit Gilon, Antonio Facchetti, Gil Markovich*, Nir Tessler

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

62 Scopus citations

Abstract

We report on in situ, self-assembly, solution-processing of metallic (Au/Ag) nanowire-based transparent electrodes integrated to vertical organic field-effect transistors (VOFETs). In the VOFET architecture, the nanowires microstructure facilitates current modulation by the gate across the otherwise shielding sandwiched source electrode. We show N-type VOFETs operation with on/off ratio ∼1 × 105 and high current density (>1 mA cm-2 at VDS = 5 V). The integration of the device design and the transparent electrode deposition methods offers a potential route for all-solution processing-based, large-area, high-efficiency organic electronics.

Original languageEnglish
Pages (from-to)2149-2152
Number of pages4
JournalACS Applied Materials and Interfaces
Volume7
Issue number4
DOIs
StatePublished - 4 Feb 2015

Funding

FundersFunder number
Israel Science Foundation695/10

    Keywords

    • nanowires
    • organic electronics
    • self-assembly
    • transparent electrodes
    • vertical FETs

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