Selective and epitaxial deposition of β-FeSi2 on silicon by rapid thermal processing-chemical vapor deposition using a solid iron source

J. L. Regolini; F. Trincat; I. Berbezier; Y. Shapira

doi:10.1063/1.106473

Selective and epitaxial deposition of β-FeSi₂ on silicon by rapid thermal processing-chemical vapor deposition using a solid iron source

J. L. Regolini^*
, F. Trincat
, I. Berbezier
, Y. Shapira

^*Corresponding author for this work

Orange Labs

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Selective semiconducting iron disilicide has been epitaxially deposited by rapid thermal processing chemical vapor deposition onto patterned silicon wafers. Using a solid iron source, we obtained stoichiometric β-FeSi ₂. The extrinsic conductivity energy levels are about 0.1 eV from the valence band and we show that they are responsible for the observed "infrared quenching.".

Original language	English
Pages (from-to)	956-958
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	8
DOIs	https://doi.org/10.1063/1.106473
State	Published - 1992
Externally published	Yes

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title = "Selective and epitaxial deposition of β-FeSi2 on silicon by rapid thermal processing-chemical vapor deposition using a solid iron source",

abstract = "Selective semiconducting iron disilicide has been epitaxially deposited by rapid thermal processing chemical vapor deposition onto patterned silicon wafers. Using a solid iron source, we obtained stoichiometric β-FeSi 2. The extrinsic conductivity energy levels are about 0.1 eV from the valence band and we show that they are responsible for the observed {"}infrared quenching.{"}.",

author = "Regolini, \{J. L.\} and F. Trincat and I. Berbezier and Y. Shapira",

year = "1992",

doi = "10.1063/1.106473",

language = "אנגלית",

volume = "60",

pages = "956--958",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Selective and epitaxial deposition of β-FeSi2 on silicon by rapid thermal processing-chemical vapor deposition using a solid iron source

AU - Regolini, J. L.

AU - Trincat, F.

AU - Berbezier, I.

AU - Shapira, Y.

PY - 1992

Y1 - 1992

N2 - Selective semiconducting iron disilicide has been epitaxially deposited by rapid thermal processing chemical vapor deposition onto patterned silicon wafers. Using a solid iron source, we obtained stoichiometric β-FeSi 2. The extrinsic conductivity energy levels are about 0.1 eV from the valence band and we show that they are responsible for the observed "infrared quenching.".

AB - Selective semiconducting iron disilicide has been epitaxially deposited by rapid thermal processing chemical vapor deposition onto patterned silicon wafers. Using a solid iron source, we obtained stoichiometric β-FeSi 2. The extrinsic conductivity energy levels are about 0.1 eV from the valence band and we show that they are responsible for the observed "infrared quenching.".

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U2 - 10.1063/1.106473

DO - 10.1063/1.106473

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AN - SCOPUS:0001540055

SN - 0003-6951

VL - 60

SP - 956

EP - 958

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Selective and epitaxial deposition of β-FeSi₂ on silicon by rapid thermal processing-chemical vapor deposition using a solid iron source

Abstract

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