Selective and epitaxial deposition of β-FeSi2 on silicon by rapid thermal processing-chemical vapor deposition using a solid iron source

J. L. Regolini*, F. Trincat, I. Berbezier, Y. Shapira

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

Selective semiconducting iron disilicide has been epitaxially deposited by rapid thermal processing chemical vapor deposition onto patterned silicon wafers. Using a solid iron source, we obtained stoichiometric β-FeSi 2. The extrinsic conductivity energy levels are about 0.1 eV from the valence band and we show that they are responsible for the observed "infrared quenching.".

Original languageEnglish
Pages (from-to)956-958
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number8
DOIs
StatePublished - 1992
Externally publishedYes

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