Abstract
Selective semiconducting iron disilicide has been epitaxially deposited by rapid thermal processing chemical vapor deposition onto patterned silicon wafers. Using a solid iron source, we obtained stoichiometric β-FeSi 2. The extrinsic conductivity energy levels are about 0.1 eV from the valence band and we show that they are responsible for the observed "infrared quenching.".
Original language | English |
---|---|
Pages (from-to) | 956-958 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 60 |
Issue number | 8 |
DOIs | |
State | Published - 1992 |
Externally published | Yes |