Schottky barrier height and image force lowering in monolayer mos2 field effect transistors

Yonatan Vaknin, Ronen Dagan, Yossi Rosenwaks

Research output: Contribution to journalArticlepeer-review

Abstract

Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices. We present direct measurement of the Schottky barrier height and its lowering in the transition metal dichalcogenide (TMD)/metal interface of a field effect transistor. It is found that the barrier height at the gold/ single-layer molybdenum disulfide (MoS2) interfaces decreases with increasing drain voltage, and this lowering reaches 0.5–1 V We also show that increase of the gate voltage induces additional barrier lowering.

Original languageEnglish
Article number2346
Pages (from-to)1-9
Number of pages9
JournalNanomaterials
Volume10
Issue number12
DOIs
StatePublished - Dec 2020

Keywords

  • 2D materials
  • FET
  • Image-force
  • KPFM
  • Schottky barrier height
  • TMD

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