Scanning tunneling microscopy of titanium silicide nanoislands

I. Goldfarb*, S. Grossman, G. Cohen-Taguri, M. Levinshtein

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

In this work, ultrathin titanium silicide layers were grown on Si(111) substrates, with the aim to stimulate spontaneous growth of nanostructures by self-assembly. Scanning tunneling microscopy was used as a primary tool for a close, in situ monitoring of the related surface processes. This method enabled a detailed observation of the formation and subsequent evolution of the silicide nanoislands as a function of deposition parameters and annealing treatments. Nanoisland shape and, possibly, phase transformations were analyzed in real time and space with atomic, or near atomic resolution. The results of these measurements are discussed, and plausible explanations offered.

Original languageEnglish
Pages (from-to)29-35
Number of pages7
JournalApplied Surface Science
Volume238
Issue number1-4 SPEC. ISS.
DOIs
StatePublished - 15 Nov 2004
EventAPHYS 2003 - Badajoz, Spain
Duration: 13 Oct 200318 Oct 2003

Keywords

  • Scanning tunneling microscopy
  • Self-assembled nanostructures
  • Silicides
  • Vapor-phase epitaxy

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