Scanning probe studies of defect dominated electronic transport in GaN

J. W. P. Hsu; D. V. Lang; M. J. Manfra; S. Richter; S. N. G. Chu; A. M. Sergent; R. N. Kleiman; L. N. Pfeiffer; R. J. Molnar

Scanning probe studies of defect dominated electronic transport in GaN

J. W. P. Hsu, D. V. Lang, M. J. Manfra, S. Richter, S. N. G. Chu, A. M. Sergent, R. N. Kleiman, L. N. Pfeiffer, R. J. Molnar

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Due to lack of suitable lattice-matched substrates, III-nitride films typically contain a high d. of defects. Hence, spatially resolved techniques are needed to understand the influence of defects on materials properties and device performance. In this paper, we show two examples of applying scanning probe microscopies to investigate defect dominated electronic transport in GaN. We find that the transport in the highly conducting interfacial region in hydride vapor phase epitaxially grown films cannot be explained by electrons in the intrinsic conduction band of GaN. Rather, our results point to the co-existence of a donor impurity band and compensating acceptors, arising from excess oxygen in the region and the defective microstructure at the GaN/sapphire interface. We also show that the reverse bias leakage current in macroscopic GaN Schottky diodes insensitive to barrier height. Scanning current-voltage images reveal that dislocations with a screw component are responsible for the excess reverse bias leakage.

Original language	English
Title of host publication	III-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV)
Subtitle of host publication	Proceedings of the International Symposia
Editors	F. Ren, D. N. Buckley, S. N. G. Chu, S. J. Pearton
Publisher	Electrochemical Society Inc.
Pages	37-50
Number of pages	14
Volume	2001-1
ISBN (Print)	1566773075, 9781566773072
State	Published - 2001
Externally published	Yes
Event	Symposium on III-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV) - Washington, D.C., United States Duration: 25 Mar 2001 → 30 Mar 2001

Publication series

Name	Proceedings - Electrochemical Society
Publisher	Electrochemical Society
Volume	2001-1
ISSN (Print)	0161-6374

Conference

Conference	Symposium on III-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV)
Abbreviated title	SOTAPOCS XXXIV
Country/Territory	United States
City	Washington, D.C.
Period	25/03/01 → 30/03/01

Keywords

gallium nitride defect electronic transport scanning probe microscopy

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Cite this

Hsu, J. W. P., Lang, D. V., Manfra, M. J., Richter, S., Chu, S. N. G., Sergent, A. M., Kleiman, R. N., Pfeiffer, L. N., & Molnar, R. J. (2001). Scanning probe studies of defect dominated electronic transport in GaN. In F. Ren, D. N. Buckley, S. N. G. Chu, & S. J. Pearton (Eds.), III-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV): Proceedings of the International Symposia (Vol. 2001-1, pp. 37-50). (Proceedings - Electrochemical Society; Vol. 2001-1). Electrochemical Society Inc.. https://books.google.co.il/books?id=uGjXd8jd2-8C&printsec=frontcover&redir_esc=y#v=onepage&q&f=false

Hsu, J. W. P. ; Lang, D. V. ; Manfra, M. J. et al. / Scanning probe studies of defect dominated electronic transport in GaN. III-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV): Proceedings of the International Symposia. editor / F. Ren ; D. N. Buckley ; S. N. G. Chu ; S. J. Pearton. Vol. 2001-1 Electrochemical Society Inc., 2001. pp. 37-50 (Proceedings - Electrochemical Society).

@inproceedings{c79588014a014d6385951934ebff04cf,

title = "Scanning probe studies of defect dominated electronic transport in GaN",

abstract = "Due to lack of suitable lattice-matched substrates, III-nitride films typically contain a high d. of defects. Hence, spatially resolved techniques are needed to understand the influence of defects on materials properties and device performance. In this paper, we show two examples of applying scanning probe microscopies to investigate defect dominated electronic transport in GaN. We find that the transport in the highly conducting interfacial region in hydride vapor phase epitaxially grown films cannot be explained by electrons in the intrinsic conduction band of GaN. Rather, our results point to the co-existence of a donor impurity band and compensating acceptors, arising from excess oxygen in the region and the defective microstructure at the GaN/sapphire interface. We also show that the reverse bias leakage current in macroscopic GaN Schottky diodes insensitive to barrier height. Scanning current-voltage images reveal that dislocations with a screw component are responsible for the excess reverse bias leakage.",

keywords = "gallium nitride defect electronic transport scanning probe microscopy",

author = "Hsu, {J. W. P.} and Lang, {D. V.} and Manfra, {M. J.} and S. Richter and Chu, {S. N. G.} and Sergent, {A. M.} and Kleiman, {R. N.} and Pfeiffer, {L. N.} and Molnar, {R. J.}",

year = "2001",

language = "אנגלית",

isbn = "1566773075",

volume = "2001-1",

series = "Proceedings - Electrochemical Society",

publisher = "Electrochemical Society Inc.",

pages = "37--50",

editor = "F. Ren and Buckley, {D. N.} and Chu, {S. N. G.} and Pearton, {S. J.}",

booktitle = "III-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV)",

}

Hsu, JWP, Lang, DV, Manfra, MJ, Richter, S, Chu, SNG, Sergent, AM, Kleiman, RN, Pfeiffer, LN & Molnar, RJ 2001, Scanning probe studies of defect dominated electronic transport in GaN. in F Ren, DN Buckley, SNG Chu & SJ Pearton (eds), III-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV): Proceedings of the International Symposia. vol. 2001-1, Proceedings - Electrochemical Society, vol. 2001-1, Electrochemical Society Inc., pp. 37-50, Symposium on III-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV), Washington, D.C., Washington, United States, 25/03/01. <https://books.google.co.il/books?id=uGjXd8jd2-8C&printsec=frontcover&redir_esc=y#v=onepage&q&f=false>

Scanning probe studies of defect dominated electronic transport in GaN. / Hsu, J. W. P.; Lang, D. V.; Manfra, M. J. et al.

III-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV): Proceedings of the International Symposia. ed. / F. Ren; D. N. Buckley; S. N. G. Chu; S. J. Pearton. Vol. 2001-1 Electrochemical Society Inc., 2001. p. 37-50 (Proceedings - Electrochemical Society; Vol. 2001-1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Scanning probe studies of defect dominated electronic transport in GaN

AU - Hsu, J. W. P.

AU - Lang, D. V.

AU - Manfra, M. J.

AU - Richter, S.

AU - Chu, S. N. G.

AU - Sergent, A. M.

AU - Kleiman, R. N.

AU - Pfeiffer, L. N.

AU - Molnar, R. J.

PY - 2001

Y1 - 2001

N2 - Due to lack of suitable lattice-matched substrates, III-nitride films typically contain a high d. of defects. Hence, spatially resolved techniques are needed to understand the influence of defects on materials properties and device performance. In this paper, we show two examples of applying scanning probe microscopies to investigate defect dominated electronic transport in GaN. We find that the transport in the highly conducting interfacial region in hydride vapor phase epitaxially grown films cannot be explained by electrons in the intrinsic conduction band of GaN. Rather, our results point to the co-existence of a donor impurity band and compensating acceptors, arising from excess oxygen in the region and the defective microstructure at the GaN/sapphire interface. We also show that the reverse bias leakage current in macroscopic GaN Schottky diodes insensitive to barrier height. Scanning current-voltage images reveal that dislocations with a screw component are responsible for the excess reverse bias leakage.

AB - Due to lack of suitable lattice-matched substrates, III-nitride films typically contain a high d. of defects. Hence, spatially resolved techniques are needed to understand the influence of defects on materials properties and device performance. In this paper, we show two examples of applying scanning probe microscopies to investigate defect dominated electronic transport in GaN. We find that the transport in the highly conducting interfacial region in hydride vapor phase epitaxially grown films cannot be explained by electrons in the intrinsic conduction band of GaN. Rather, our results point to the co-existence of a donor impurity band and compensating acceptors, arising from excess oxygen in the region and the defective microstructure at the GaN/sapphire interface. We also show that the reverse bias leakage current in macroscopic GaN Schottky diodes insensitive to barrier height. Scanning current-voltage images reveal that dislocations with a screw component are responsible for the excess reverse bias leakage.

KW - gallium nitride defect electronic transport scanning probe microscopy

M3 - פרסום בספר כנס

SN - 1566773075

SN - 9781566773072

VL - 2001-1

T3 - Proceedings - Electrochemical Society

SP - 37

EP - 50

BT - III-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV)

A2 - Ren, F.

A2 - Buckley, D. N.

A2 - Chu, S. N. G.

A2 - Pearton, S. J.

PB - Electrochemical Society Inc.

Y2 - 25 March 2001 through 30 March 2001

ER -

Hsu JWP, Lang DV, Manfra MJ, Richter S, Chu SNG, Sergent AM et al. Scanning probe studies of defect dominated electronic transport in GaN. In Ren F, Buckley DN, Chu SNG, Pearton SJ, editors, III-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV): Proceedings of the International Symposia. Vol. 2001-1. Electrochemical Society Inc. 2001. p. 37-50. (Proceedings - Electrochemical Society).

Scanning probe studies of defect dominated electronic transport in GaN

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