Scanning probe studies of defect dominated electronic transport in GaN

J. W. P. Hsu, D. V. Lang, M. J. Manfra, S. Richter, S. N. G. Chu, A. M. Sergent, R. N. Kleiman, L. N. Pfeiffer, R. J. Molnar

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Due to lack of suitable lattice-matched substrates, III-nitride films typically contain a high d. of defects. Hence, spatially resolved techniques are needed to understand the influence of defects on materials properties and device performance. In this paper, we show two examples of applying scanning probe microscopies to investigate defect dominated electronic transport in GaN. We find that the transport in the highly conducting interfacial region in hydride vapor phase epitaxially grown films cannot be explained by electrons in the intrinsic conduction band of GaN. Rather, our results point to the co-existence of a donor impurity band and compensating acceptors, arising from excess oxygen in the region and the defective microstructure at the GaN/sapphire interface. We also show that the reverse bias leakage current in macroscopic GaN Schottky diodes insensitive to barrier height. Scanning current-voltage images reveal that dislocations with a screw component are responsible for the excess reverse bias leakage.
Original languageEnglish
Title of host publicationIII-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV)
Subtitle of host publicationProceedings of the International Symposia
EditorsF. Ren, D. N. Buckley, S. N. G. Chu, S. J. Pearton
PublisherElectrochemical Society Inc.
Pages37-50
Number of pages14
Volume2001-1
ISBN (Print)1566773075, 9781566773072
StatePublished - 2001
Externally publishedYes
EventSymposium on III-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV) - Washington, D.C., United States
Duration: 25 Mar 200130 Mar 2001

Publication series

NameProceedings - Electrochemical Society
PublisherElectrochemical Society
Volume2001-1
ISSN (Print)0161-6374

Conference

ConferenceSymposium on III-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV)
Abbreviated titleSOTAPOCS XXXIV
Country/TerritoryUnited States
CityWashington, D.C.
Period25/03/0130/03/01

Keywords

  • gallium nitride defect electronic transport scanning probe microscopy

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