Scalable Integration of Coplanar Heterojunction Monolithic Devices on Two-Dimensional In2Se3

Subhrajit Mukherjee, Debopriya Dutta, Pranab K. Mohapatra, Lital Dezanashvili, Ariel Ismach, Elad Koren*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The formation of lateral heterojunction arrays within two-dimensional (2D) crystals is an essential step to realize high-density, ultrathin electro-optical integrated circuits, although the assembling of such structures remains elusive. Here we demonstrated a rapid, scalable, and site-specific integration of lateral 2D heterojunction arrays using few-layer indium selenide (In2Se3). We use a scanning laser probe to locally convert In2Se3 into In2O3, which shows a significant increase in carrier mobility and transforms the metal-semiconductor junctions from Schottky to ohmic type. In addition, a lateral p-n heterojunction diode within a single nanosheet is demonstrated and utilized for photosensing applications. The presented method enables high-yield, site-specific formation of lateral 2D In2Se3-In2O3-based hybrid heterojunctions for realizing nanoscale devices with multiple advanced functionalities.

Original languageEnglish
Pages (from-to)17543-17553
Number of pages11
JournalACS Nano
Volume14
Issue number12
DOIs
StatePublished - 22 Dec 2020

Funding

FundersFunder number
Taub Foundation2549/17, 2171/17
Israel Science Foundation1567/18

    Keywords

    • InSe
    • Kelvin probe microscopy
    • Raman/PL mapping
    • atomically thin ICs
    • coplanar p-n heterojunction
    • light-induced conversion
    • phototransistor

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