Room-temperature operation of GaAs Bragg-mirror lasers

W. Ng, H. W. Yen, A. Katzir, I. Samid, A. Yariv

Research output: Contribution to journalArticlepeer-review

Abstract

Room-temperature operation of GaAs distributed Bragg reflector lasers is reported. The diodes are fabricated from conventional double heterostructures involving only a single step of liquid-phase epitaxy. For gratings with a period of 3700 Å, the diodes lased at 8770 Å, which corresponds to the high-absorption side of the spontaneous emission spectrum. Thresholds as low as 6 kA/cm2 have been realized.

Original languageEnglish
Pages (from-to)684-686
Number of pages3
JournalApplied Physics Letters
Volume29
Issue number10
DOIs
StatePublished - 1976
Externally publishedYes

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