TY - JOUR
T1 - Role of local microchemistry and surface structure in electrical resistivity of 50 nm electroless films Ag-W-oxygen
AU - Glickman, E.
AU - Inberg, A.
AU - Bogush, V.
AU - Aviram, G.
AU - Popovitz, R.
AU - Croitoru, N.
AU - Shacham-Diamand, Y.
PY - 2005/12
Y1 - 2005/12
N2 - We studied electroless 50 nm films Ag (0.2-1.2 at.% W) which contain also some oxygen and were deposited onto SiO2/Si substrate. The films showed better corrosion resistance and hardness than pure Ag, but rather high electrical resistivity ρ which decayed fast after annealing at T ≥ 100 °C [Y. Shacham-Diamand, A. Inberg, Y. Sverdlov, N. Croitoru, J. Electrochem. Soc. 147 (2000), 3345-3349; A. Inberg, V. Bogush, N. Croitoru, V. Dubin, Y. Shacham-Diamand, J. Electrochem. Soc. 150 (2003) C285-C291; V. Bogush, E. Ginsburg, A. Inberg, N. Croitoru, V. Dubin, Y. Shacham-Diamand, in: G.W. Ray et al. (Eds.), Advanced Metallization Conference 2003 (AMC 2003), MRS, Warrendale, PA, 2004, pp. 607-611; E.E. Glickman, A. Inberg, V. Bogush, N. Croitoru, Y. Shacham-Diamand, Microelectron. Eng. 70 (2003) 495-500; E.E. Glickman, A. Inberg, V. Bogush, G. Aviram, N. Croitoru, Y. Shacham-Diamand, Microelectron. Eng. 76 (2004) 182-189]. Application of XPS, HRTEM/EELS and HRSEM/EDS made it possible to reveal that open porosity, co-segregation of W and oxygen and formation of non-metallic phases Ag2W2O7 and AgO at the grain/cluster of grains interfaces are the major factors which contributed to high ρ in the as-deposited films. AFM data treated in terms of fractal scaling theory suggest that surface tension driven sintering in the course of annealing at 125 °C is responsible for the resistivity decay, while HRTEM shows that grain size does not change.
AB - We studied electroless 50 nm films Ag (0.2-1.2 at.% W) which contain also some oxygen and were deposited onto SiO2/Si substrate. The films showed better corrosion resistance and hardness than pure Ag, but rather high electrical resistivity ρ which decayed fast after annealing at T ≥ 100 °C [Y. Shacham-Diamand, A. Inberg, Y. Sverdlov, N. Croitoru, J. Electrochem. Soc. 147 (2000), 3345-3349; A. Inberg, V. Bogush, N. Croitoru, V. Dubin, Y. Shacham-Diamand, J. Electrochem. Soc. 150 (2003) C285-C291; V. Bogush, E. Ginsburg, A. Inberg, N. Croitoru, V. Dubin, Y. Shacham-Diamand, in: G.W. Ray et al. (Eds.), Advanced Metallization Conference 2003 (AMC 2003), MRS, Warrendale, PA, 2004, pp. 607-611; E.E. Glickman, A. Inberg, V. Bogush, N. Croitoru, Y. Shacham-Diamand, Microelectron. Eng. 70 (2003) 495-500; E.E. Glickman, A. Inberg, V. Bogush, G. Aviram, N. Croitoru, Y. Shacham-Diamand, Microelectron. Eng. 76 (2004) 182-189]. Application of XPS, HRTEM/EELS and HRSEM/EDS made it possible to reveal that open porosity, co-segregation of W and oxygen and formation of non-metallic phases Ag2W2O7 and AgO at the grain/cluster of grains interfaces are the major factors which contributed to high ρ in the as-deposited films. AFM data treated in terms of fractal scaling theory suggest that surface tension driven sintering in the course of annealing at 125 °C is responsible for the resistivity decay, while HRTEM shows that grain size does not change.
KW - Electrical resistivity
KW - Fractal scaling
KW - Open porosity
KW - Roughness
KW - Sintering
KW - Thin Ag films
UR - http://www.scopus.com/inward/record.url?scp=28044442721&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2005.07.039
DO - 10.1016/j.mee.2005.07.039
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AN - SCOPUS:28044442721
SN - 0167-9317
VL - 82
SP - 307
EP - 313
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 3-4 SPEC. ISS.
ER -