Retention loss characteristics of localized charge-trapping devices

Eli Lusky; Yossi Shacham-Diamand; Assaf Shappir; Ilan Bloom; Guy Cohen; Boaz Eitan

doi:10.1109/RELPHY.2004.1315384

Retention loss characteristics of localized charge-trapping devices

Eli Lusky, Yossi Shacham-Diamand, Assaf Shappir, Ilan Bloom, Guy Cohen, Boaz Eitan

School of Electrical Engineering

Saifun Semiconductors Ltd.

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Original language	English
Article number	1315384
Pages (from-to)	527-530
Number of pages	4
Journal	IEEE International Reliability Physics Symposium Proceedings
Volume	2004-January
Issue number	January
DOIs	https://doi.org/10.1109/RELPHY.2004.1315384
State	Published - 2004
Event	42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States Duration: 25 Apr 2004 → 29 Apr 2004

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10.1109/RELPHY.2004.1315384

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title = "Retention loss characteristics of localized charge-trapping devices",

author = "Eli Lusky and Yossi Shacham-Diamand and Assaf Shappir and Ilan Bloom and Guy Cohen and Boaz Eitan",

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AU - Lusky, Eli

AU - Shacham-Diamand, Yossi

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AU - Bloom, Ilan

AU - Cohen, Guy

AU - Eitan, Boaz

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JO - IEEE International Reliability Physics Symposium Proceedings

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IS - January

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T2 - 42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004

Y2 - 25 April 2004 through 29 April 2004

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Retention loss characteristics of localized charge-trapping devices

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