TY - JOUR
T1 - Retention loss characteristics of localized charge-trapping devices
AU - Lusky, Eli
AU - Shacham-Diamand, Yossi
AU - Shappir, Assaf
AU - Bloom, Ilan
AU - Cohen, Guy
AU - Eitan, Boaz
PY - 2004
Y1 - 2004
N2 - A lateral hole redistribution model was studied for the NROM cell retention after cycling. The model helped in developing a cycling in-sensitive retention process, based on drain engineering. The cycling effect on the EEPROM product retention loss for two different process types was also discussed. The prevention of vertical charge transport outside of the storage medium results in 10 years data storage with no single bit failure.
AB - A lateral hole redistribution model was studied for the NROM cell retention after cycling. The model helped in developing a cycling in-sensitive retention process, based on drain engineering. The cycling effect on the EEPROM product retention loss for two different process types was also discussed. The prevention of vertical charge transport outside of the storage medium results in 10 years data storage with no single bit failure.
UR - http://www.scopus.com/inward/record.url?scp=3042656424&partnerID=8YFLogxK
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AN - SCOPUS:3042656424
SN - 0099-9512
SP - 527
EP - 530
JO - Annual Proceedings - Reliability Physics (Symposium)
JF - Annual Proceedings - Reliability Physics (Symposium)
T2 - 2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual
Y2 - 25 April 2004 through 29 April 2004
ER -
