Retention loss characteristics of localized charge-trapping devices

Eli Lusky, Yossi Shacham-Diamand, Assaf Shappir, Ilan Bloom, Guy Cohen, Boaz Eitan

Research output: Contribution to journalConference articlepeer-review

Abstract

A lateral hole redistribution model was studied for the NROM cell retention after cycling. The model helped in developing a cycling in-sensitive retention process, based on drain engineering. The cycling effect on the EEPROM product retention loss for two different process types was also discussed. The prevention of vertical charge transport outside of the storage medium results in 10 years data storage with no single bit failure.

Original languageEnglish
Pages (from-to)527-530
Number of pages4
JournalAnnual Proceedings - Reliability Physics (Symposium)
StatePublished - 2004
Event2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual - Phoenix, AZ., United States
Duration: 25 Apr 200429 Apr 2004

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