Response to 'Comment on "Effect of sub-band-gap illumination on β-FeSi2/n-type Si diodes under reverse bias" '

Response to 'Comment on "Effect of sub-band-gap illumination on β-FeSi₂/n-type Si diodes under reverse bias" '

M. Leibovitch^*, Yoram Shapira, J. L. Regolini

^*Corresponding author for this work

Research output: Contribution to journal › Comment/debate

@article{299f37dae4f74efbbb90888571329a06,

title = "Response to 'Comment on {"}Effect of sub-band-gap illumination on β-FeSi2/n-type Si diodes under reverse bias{"} '",

author = "M. Leibovitch and Yoram Shapira and Regolini, {J. L.}",

year = "1993",

doi = "10.1063/1.110571",

language = "אנגלית",

volume = "63",

pages = "2154",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Response to 'Comment on "Effect of sub-band-gap illumination on β-FeSi2/n-type Si diodes under reverse bias" '

AU - Leibovitch, M.

AU - Shapira, Yoram

AU - Regolini, J. L.

PY - 1993

Y1 - 1993

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U2 - 10.1063/1.110571

DO - 10.1063/1.110571

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AN - SCOPUS:51149208879

SN - 0003-6951

VL - 63

SP - 2154

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -