Resistivity monitoring of the early stages of W CVD nucleation for sub-45 nm process

S. Haimson, Y. Shacham-Diamand, D. Horvitz, A. Rozenblat*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The growth of polycrystalline metallic thin films is widely investigated by diverse in situ and ex situ analytical techniques. Significant research is dedicated to developing methods for monitoring surface coverage and morphology changes during the early stages of growth and to studying growth-mode characteristics. In this work, we demonstrate use of the electrical four-point probes (FPP) technique to examine changes in resistivity during tungsten growth over titanium nitride (TiN) and before a full surface coverage are assembled by the new tungsten phase. Results suggest the formation of electrical percolation paths at ∼35% surface coverage of tungsten on TiN substrate.

Original languageEnglish
Pages (from-to)134-136
Number of pages3
JournalMicroelectronic Engineering
Volume92
DOIs
StatePublished - Apr 2012

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