Resistance minimum and electrical conduction mechanism in polycrystalline CoFeB thin films

G. Venkat Swamy, P. K. Rout, Manju Singh, R. K. Rakshit

Research output: Contribution to journalArticlepeer-review


The temperature dependent resistance R(T) of polycrystalline ferromagnetic CoFeB thin films of varying thicknesses are analyzed considering various electrical scattering processes. We observe a resistance minimum in R(T) curves below ≃29 K, which can be explained as an effect of the intergranular Coulomb interaction in a granular system. The structural and Coulomb interaction related scattering processes contribute more as the film thickness decreases implying the role of disorder and granularity. Although the magnetic contribution to the resistance is the weakest compared to these two, it is the only thickness independent process. On the contrary, the negative coefficient of resistance can be explained by the electron interaction effect in disordered amorphous films.

Original languageEnglish
Article number475002
JournalJournal of Physics D: Applied Physics
Issue number47
StatePublished - 26 Oct 2015
Externally publishedYes


  • Ferromagnetic alloy
  • spintronics material
  • thin film


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