TY - JOUR
T1 - Reorientation phase transition and sensitivity of the extraordinary Hall-effect-based sensors
AU - Riss, O.
AU - Tsukernik, A.
AU - Karpovsky, M.
AU - Gerber, A.
N1 - Funding Information:
This work was supported in part by the Israel Science Foundation (ISF) Grant no. 220/02-1.
PY - 2006/3
Y1 - 2006/3
N2 - Spin reorientation phase transition was observed in 5-10 nm thick polycrystalline Ni films at about 150 K. The extraordinary Hall effect resistivity in these films is enhanced by surface scattering and is of the order of 1 μΩ cm. Magnetization reversal in the vicinity of the transition is very sharp due to the development of the multi-domain structure with the out-of-plane anisotropy. As a result, the field sensitivity of the Hall resistance reaches values exceeding 500 Ω/T.
AB - Spin reorientation phase transition was observed in 5-10 nm thick polycrystalline Ni films at about 150 K. The extraordinary Hall effect resistivity in these films is enhanced by surface scattering and is of the order of 1 μΩ cm. Magnetization reversal in the vicinity of the transition is very sharp due to the development of the multi-domain structure with the out-of-plane anisotropy. As a result, the field sensitivity of the Hall resistance reaches values exceeding 500 Ω/T.
KW - Extraordinary Hall effect
KW - Magnetic field sensors
KW - Spin orientation phase transition
UR - http://www.scopus.com/inward/record.url?scp=27744456637&partnerID=8YFLogxK
U2 - 10.1016/j.jmmm.2005.03.003
DO - 10.1016/j.jmmm.2005.03.003
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AN - SCOPUS:27744456637
SN - 0304-8853
VL - 298
SP - 73
EP - 77
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
IS - 2
ER -