Reorientation phase transition and sensitivity of the extraordinary Hall-effect-based sensors

O. Riss, A. Tsukernik, M. Karpovsky, A. Gerber*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Spin reorientation phase transition was observed in 5-10 nm thick polycrystalline Ni films at about 150 K. The extraordinary Hall effect resistivity in these films is enhanced by surface scattering and is of the order of 1 μΩ cm. Magnetization reversal in the vicinity of the transition is very sharp due to the development of the multi-domain structure with the out-of-plane anisotropy. As a result, the field sensitivity of the Hall resistance reaches values exceeding 500 Ω/T.

Original languageEnglish
Pages (from-to)73-77
Number of pages5
JournalJournal of Magnetism and Magnetic Materials
Volume298
Issue number2
DOIs
StatePublished - Mar 2006

Funding

FundersFunder number
Israel Science Foundation220/02-1

    Keywords

    • Extraordinary Hall effect
    • Magnetic field sensors
    • Spin orientation phase transition

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