Reliability of copper metallization on silicon-dioxide

Keyphrases

• Oxides 100%
• Silicon Dioxide 100%
• Copper Metallization 100%
• Adhesion Layer 40%
• Electric Field (E-field) 20%
• Order of Magnitude 20%
• Low Temperature 20%
• High Temperature 20%
• Secondary Ion Mass Spectrometry 20%
• Layer Thickness 20%
• Stress Studies 20%
• Capacitance-voltage 20%
• Rutile 20%
• Metallization 20%
• Mass Spectrometry Analysis 20%
• Penetration Time 20%
• High Copper Concentration 20%
• Activation Energy 20%
• Multicrystalline Silicon 20%
• Electroless Copper 20%
• High-frequency Capacitance 20%
• Voltage Characteristics 20%
• MOS Structure 20%
• Alkali-free 20%
• Rutherford Backscattering 20%
• Surface Concentration 20%
• Capacitance Technique 20%
• MOS Devices 20%
• Handheld Devices 20%
• SIMS Analysis 20%
• Titanium Barrier 20%
• Biased Sample 20%
• Positive Electric Field 20%
• Copper-copper 20%

Engineering

• Metallizations 100%
• Silicon Dioxide 100%
• Adhesion Layer 66%
• Electric Field 66%
• Low-Temperature 33%
• Layer Thickness 33%
• Activation Energy 33%
• Crystalline Silicon 33%
• Penetration Time 33%
• Surface Concentration 33%
• Mass Spectrum 33%
• Mass Spectrometry 33%
• Mass Spectroscopy 33%

Material Science

• Oxide Compound 100%
• Silicon Dioxide 100%
• Secondary Ion Mass Spectrometry 40%
• Capacitance 40%
• Titanium 40%
• Silicon 20%
• Activation Energy 20%