Reflectivity of TE Modes at the Facets of Buried Heterostructure Injection Lasers

D. Handelman, A. Katzir, A. Hardy*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The mode reflectivity of narrow stripe geometry buried-heterostructure GaAs/GaAIAs lasers was computed taking into account lateral confinement, as well as transverse confinment. The reflectivity was found to increase with increasing of the junction width, up to the broad-area value, in contrast to results obtained previously. The differences between the lowest computed reflectivities and the broad-area values were found to be 10–25 percent. Lateral confinement should therefore he considered in cases where single-mode confinement and mode reflectivity are important.

Original languageEnglish
Pages (from-to)498-500
Number of pages3
JournalIEEE Journal of Quantum Electronics
Volume22
Issue number4
DOIs
StatePublished - Apr 1986

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