Abstract
The mode reflectivity of narrow stripe geometry buried-heterostructure GaAs/GaAIAs lasers was computed taking into account lateral confinement, as well as transverse confinment. The reflectivity was found to increase with increasing of the junction width, up to the broad-area value, in contrast to results obtained previously. The differences between the lowest computed reflectivities and the broad-area values were found to be 10–25 percent. Lateral confinement should therefore he considered in cases where single-mode confinement and mode reflectivity are important.
Original language | English |
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Pages (from-to) | 498-500 |
Number of pages | 3 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 22 |
Issue number | 4 |
DOIs | |
State | Published - Apr 1986 |