TY - JOUR
T1 - Reflectivity of TE Modes at the Facets of Buried Heterostructure Injection Lasers
AU - Handelman, D.
AU - Katzir, A.
AU - Hardy, A.
PY - 1986/4
Y1 - 1986/4
N2 - The mode reflectivity of narrow stripe geometry buried-heterostructure GaAs/GaAIAs lasers was computed taking into account lateral confinement, as well as transverse confinment. The reflectivity was found to increase with increasing of the junction width, up to the broad-area value, in contrast to results obtained previously. The differences between the lowest computed reflectivities and the broad-area values were found to be 10–25 percent. Lateral confinement should therefore he considered in cases where single-mode confinement and mode reflectivity are important.
AB - The mode reflectivity of narrow stripe geometry buried-heterostructure GaAs/GaAIAs lasers was computed taking into account lateral confinement, as well as transverse confinment. The reflectivity was found to increase with increasing of the junction width, up to the broad-area value, in contrast to results obtained previously. The differences between the lowest computed reflectivities and the broad-area values were found to be 10–25 percent. Lateral confinement should therefore he considered in cases where single-mode confinement and mode reflectivity are important.
UR - http://www.scopus.com/inward/record.url?scp=0022702439&partnerID=8YFLogxK
U2 - 10.1109/JQE.1986.1072998
DO - 10.1109/JQE.1986.1072998
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AN - SCOPUS:0022702439
SN - 0018-9197
VL - 22
SP - 498
EP - 500
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
IS - 4
ER -