Rectification, gating voltage, and interchannel communication of nanoslot arrays due to asymmetric entrance space charge polarization

Gilad Yossifon, Yu Chen Chang, Hsueh Chia Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A nanoslot array with a uniform surface charge and height but with asymmetric slot entrances is shown to exhibit strong rectification, gating type current-voltage characteristics and a total current higher than the sum of isolated slots at a large voltage. Unlike previous reports of low-voltage current rectification within nanopores and nanochannels with a nonuniform surface charge and/or height, the asymmetry is due to asymmetric space-charge polarization and interslot communication at only one of the two different entrances.

Original languageEnglish
Article number154502
JournalPhysical Review Letters
Volume103
Issue number15
DOIs
StatePublished - 8 Oct 2009
Externally publishedYes

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