Reconstruction of electrostatic force microscopy images

E. Strassburg*, A. Boag, Y. Rosenwaks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

96 Scopus citations


An efficient algorithm to restore the actual surface potential image from Kelvin probe force microscopy measurements of semiconductors is presented. The three-dimensional potential of the tip-sample system is calculated using an integral equation-based boundary element method combined with modeling the semiconductor by an equivalent dipole-layer and image-charge model. The derived point spread function of the measuring tip is then used to restore the actual surface potential from the measured image, using noise filtration and deconvolution algorithms. The model is then used to restore high-resolution Kelvin probe microscopy images of semiconductor surfaces.

Original languageEnglish
Article number083705
Pages (from-to)1-5
Number of pages5
JournalReview of Scientific Instruments
Issue number8
StatePublished - Aug 2005


FundersFunder number
German Israeli Science Foundation
German-Israeli Foundation for Scientific Research and Development801/03
Israel Science Foundation224/03, 1118/04


    Dive into the research topics of 'Reconstruction of electrostatic force microscopy images'. Together they form a unique fingerprint.

    Cite this