Recent advances in silicon fet devices for gas and volatile organic compound sensing

Anwesha Mukherjee*, Yossi Rosenwaks*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

27 Scopus citations

Abstract

Highly sensitive and selective gas and volatile organic compound (VOC) sensor platforms with fast response and recovery kinetics are in high demand for environmental health monitoring, industry, and medical diagnostics. Among the various categories of gas sensors studied to date, field effect transistors (FETs) have proved to be an extremely efficient platform due to their miniaturized form factor, high sensitivity, and ultra-low power consumption. Despite the advent of various kinds of new materials, silicon (Si) still enjoys the advantages of excellent and reproducible electronic properties and compatibility with complementary metal–oxide–semiconductor (CMOS) technologies for integrated multiplexing and signal processing. This review gives an overview of the recent developments in Si FETs for gas and VOC sensing. We categorised the Si FETs into Si nanowire (NW) FETs; planar Si FETs, in which the Si channel is either a part of the silicon on insulator (SOI) or the bulk Si, as in conventional FETs; and electrostatically formed nanowire (EFN) FETs. The review begins with a brief introduction, followed by a description of the Si NW FET gas and VOC sensors. A brief description of the various fabrication strategies of Si NWs and the several functionalisation methods to improve the sensing performances of Si NWs are also provided. Although Si NW FETs have excellent sensing properties, they are far from practical realisation due to the extensive fabrication procedures involved, along with other issues that are critically assessed briefly. Then, we describe planar Si FET sensors, which are much closer to real-world implementation. Their simpler device architecture combined with excellent sensing properties enable them as an efficient platform for gas sensing. The third category, the EFN FET sensors, proved to be another potential platform for gas sensing due to their intriguing properties, which are elaborated in detail. Finally, the challenges and future opportunities for gas sensing are addressed.

Original languageEnglish
Article number260
JournalChemosensors
Volume9
Issue number9
DOIs
StatePublished - Sep 2021

Funding

FundersFunder number
Office of Naval ResearchN000141912010

    Keywords

    • Electrostatically formed nanowire
    • Functionalization
    • Gas sensor
    • Selectivity
    • Sensitivity
    • Silicon FETs
    • Silicon nanowire
    • VOC sensor

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