TY - GEN
T1 - Re-usable 180nm CMOS dosimeter based on a floating gate device
AU - Pikhay, E.
AU - Roizin, Y.
AU - Gatti, U.
AU - Calligaro, C.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2017/2/2
Y1 - 2017/2/2
N2 - A rad-hard monolithic dosimeter has been designed and simulated in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a floating gate MOS discharge principle. The output current is processed by a current-to-voltage (I-to-V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG is recharged) and in this first version can detect a dose up to 1krad(Si) with a resolution of 30rad(Si), over process and temperature variations (0 to 85°C). The ADC allows easy further signal processing for calibration, averaging, etc. The power consumption of C-sensor plus I-to-V interface is less than 2mW from a single 5 V power supply, while the ADC consumes 160mW. The overall layout area is less than 0.25mm2. The Radiation Hardened By Design (RHBD) approach guarantees that the absorbed dose does not modify the performance of the mixed-signal circuitry.
AB - A rad-hard monolithic dosimeter has been designed and simulated in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a floating gate MOS discharge principle. The output current is processed by a current-to-voltage (I-to-V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG is recharged) and in this first version can detect a dose up to 1krad(Si) with a resolution of 30rad(Si), over process and temperature variations (0 to 85°C). The ADC allows easy further signal processing for calibration, averaging, etc. The power consumption of C-sensor plus I-to-V interface is less than 2mW from a single 5 V power supply, while the ADC consumes 160mW. The overall layout area is less than 0.25mm2. The Radiation Hardened By Design (RHBD) approach guarantees that the absorbed dose does not modify the performance of the mixed-signal circuitry.
KW - Analog-to-Digital converter
KW - Dosimeter
KW - current-to-voltage interfaces
KW - edgeless transistors (ELT)
KW - floating gate MOS
KW - radiation hardening by design (RHBD)
KW - single event latchup (SEL)
KW - space electronics
KW - total ionizing dose (TID)
UR - http://www.scopus.com/inward/record.url?scp=85015302652&partnerID=8YFLogxK
U2 - 10.1109/ICECS.2016.7841148
DO - 10.1109/ICECS.2016.7841148
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AN - SCOPUS:85015302652
T3 - 2016 IEEE International Conference on Electronics, Circuits and Systems, ICECS 2016
SP - 125
EP - 128
BT - 2016 IEEE International Conference on Electronics, Circuits and Systems, ICECS 2016
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 11 December 2016 through 14 December 2016
ER -