Re-usable 180nm CMOS dosimeter based on a floating gate device

E. Pikhay, Y. Roizin, U. Gatti, C. Calligaro

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A rad-hard monolithic dosimeter has been designed and simulated in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a floating gate MOS discharge principle. The output current is processed by a current-to-voltage (I-to-V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG is recharged) and in this first version can detect a dose up to 1krad(Si) with a resolution of 30rad(Si), over process and temperature variations (0 to 85°C). The ADC allows easy further signal processing for calibration, averaging, etc. The power consumption of C-sensor plus I-to-V interface is less than 2mW from a single 5 V power supply, while the ADC consumes 160mW. The overall layout area is less than 0.25mm2. The Radiation Hardened By Design (RHBD) approach guarantees that the absorbed dose does not modify the performance of the mixed-signal circuitry.

Original languageEnglish
Title of host publication2016 IEEE International Conference on Electronics, Circuits and Systems, ICECS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages125-128
Number of pages4
ISBN (Electronic)9781509061136
DOIs
StatePublished - 2 Feb 2017
Externally publishedYes
Event23rd IEEE International Conference on Electronics, Circuits and Systems, ICECS 2016 - Monte Carlo, Monaco
Duration: 11 Dec 201614 Dec 2016

Publication series

Name2016 IEEE International Conference on Electronics, Circuits and Systems, ICECS 2016

Conference

Conference23rd IEEE International Conference on Electronics, Circuits and Systems, ICECS 2016
Country/TerritoryMonaco
CityMonte Carlo
Period11/12/1614/12/16

Keywords

  • Analog-to-Digital converter
  • Dosimeter
  • current-to-voltage interfaces
  • edgeless transistors (ELT)
  • floating gate MOS
  • radiation hardening by design (RHBD)
  • single event latchup (SEL)
  • space electronics
  • total ionizing dose (TID)

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