Radiation tolerance of NROM embedded products

Michael Lisiansky; Gil Cassuto; Yakov Roizin; Domenico Corso; Sebania Libertino; Antonio Marino; Salvatore A. Lombardo; Isodiana Crupi; Calogero Pace; Felice Crupi; David Fuks; Arik Kiv; Ernesto Della Sala; Giuseppe Capuano; Felix Palumbo

doi:10.1109/TNS.2010.2052286

Radiation tolerance of NROM embedded products

Michael Lisiansky^*, Gil Cassuto, Yakov Roizin, Domenico Corso, Sebania Libertino, Antonio Marino, Salvatore A. Lombardo, Isodiana Crupi, Calogero Pace, Felice Crupi, David Fuks, Arik Kiv, Ernesto Della Sala, Giuseppe Capuano, Felix Palumbo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with γ-rays (⁶⁰Co source) and 10 MeV ¹¹B ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for both moderate (< 1 Mrad) and large (> 1 Mrad) TID. The obtained data is currently employed in the design of the new generation of NROM memories, having improved radiation tolerance

Original language	English
Article number	5550444
Pages (from-to)	2309-2317
Number of pages	9
Journal	IEEE Transactions on Nuclear Science
Volume	57
Issue number	4 PART 2
DOIs	https://doi.org/10.1109/TNS.2010.2052286
State	Published - Aug 2010
Externally published	Yes

Keywords

Floating gate memories
ONO
radiation effects
radiation hardening

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title = "Radiation tolerance of NROM embedded products",

abstract = "Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with γ-rays (60Co source) and 10 MeV 11B ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for both moderate (< 1 Mrad) and large (> 1 Mrad) TID. The obtained data is currently employed in the design of the new generation of NROM memories, having improved radiation tolerance",

keywords = "Floating gate memories, ONO, radiation effects, radiation hardening",

author = "Michael Lisiansky and Gil Cassuto and Yakov Roizin and Domenico Corso and Sebania Libertino and Antonio Marino and Lombardo, {Salvatore A.} and Isodiana Crupi and Calogero Pace and Felice Crupi and David Fuks and Arik Kiv and {Della Sala}, Ernesto and Giuseppe Capuano and Felix Palumbo",

year = "2010",

month = aug,

doi = "10.1109/TNS.2010.2052286",

language = "אנגלית",

volume = "57",

pages = "2309--2317",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Radiation tolerance of NROM embedded products

AU - Lisiansky, Michael

AU - Cassuto, Gil

AU - Roizin, Yakov

AU - Corso, Domenico

AU - Libertino, Sebania

AU - Marino, Antonio

AU - Lombardo, Salvatore A.

AU - Crupi, Isodiana

AU - Pace, Calogero

AU - Crupi, Felice

AU - Fuks, David

AU - Kiv, Arik

AU - Della Sala, Ernesto

AU - Capuano, Giuseppe

AU - Palumbo, Felix

PY - 2010/8

Y1 - 2010/8

N2 - Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with γ-rays (60Co source) and 10 MeV 11B ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for both moderate (< 1 Mrad) and large (> 1 Mrad) TID. The obtained data is currently employed in the design of the new generation of NROM memories, having improved radiation tolerance

AB - Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with γ-rays (60Co source) and 10 MeV 11B ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for both moderate (< 1 Mrad) and large (> 1 Mrad) TID. The obtained data is currently employed in the design of the new generation of NROM memories, having improved radiation tolerance

KW - Floating gate memories

KW - ONO

KW - radiation effects

KW - radiation hardening

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DO - 10.1109/TNS.2010.2052286

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EP - 2317

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 4 PART 2

M1 - 5550444

ER -

Radiation tolerance of NROM embedded products

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Keywords

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