Radiation tolerance of NROM embedded products

Michael Lisiansky*, Gil Cassuto, Yakov Roizin, Domenico Corso, Sebania Libertino, Antonio Marino, Salvatore A. Lombardo, Isodiana Crupi, Calogero Pace, Felice Crupi, David Fuks, Arik Kiv, Ernesto Della Sala, Giuseppe Capuano, Felix Palumbo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with γ-rays (60Co source) and 10 MeV 11B ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for both moderate (< 1 Mrad) and large (> 1 Mrad) TID. The obtained data is currently employed in the design of the new generation of NROM memories, having improved radiation tolerance

Original languageEnglish
Article number5550444
Pages (from-to)2309-2317
Number of pages9
JournalIEEE Transactions on Nuclear Science
Issue number4 PART 2
StatePublished - Aug 2010
Externally publishedYes


  • Floating gate memories
  • ONO
  • radiation effects
  • radiation hardening


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