Radiation-induced nitrogen segregation during electron energy loss spectroscopy of silicon oxide-nitride-oxide stacks

Igor Levin; Richard D. Leapman; Mark Kovler; Yakov Roizin

doi:10.1063/1.1604182

Radiation-induced nitrogen segregation during electron energy loss spectroscopy of silicon oxide-nitride-oxide stacks

Igor Levin^*
, Richard D. Leapman
, Mark Kovler
, Yakov Roizin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A study was performed on radiation-induced nitrogen segregation during electron energy loss spectroscopy (EELS) of silicon oxide - nitride-oxide stacks. EELS in both scanning transmission electron microscopy (STEM) and fixed-probe TEM was used to measure the elemental profiles of Si, O and N in the stacks deposited on silicon. Results showed radiation-induced nitrogen segregation to both the SiO_x/poly-Si and Si/SiO_x interfaces.

Original language	English
Pages (from-to)	1548-1550
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	8
DOIs	https://doi.org/10.1063/1.1604182
State	Published - 25 Aug 2003
Externally published	Yes

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10.1063/1.1604182

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title = "Radiation-induced nitrogen segregation during electron energy loss spectroscopy of silicon oxide-nitride-oxide stacks",

abstract = "A study was performed on radiation-induced nitrogen segregation during electron energy loss spectroscopy (EELS) of silicon oxide - nitride-oxide stacks. EELS in both scanning transmission electron microscopy (STEM) and fixed-probe TEM was used to measure the elemental profiles of Si, O and N in the stacks deposited on silicon. Results showed radiation-induced nitrogen segregation to both the SiOx/poly-Si and Si/SiOx interfaces.",

author = "Igor Levin and Leapman, \{Richard D.\} and Mark Kovler and Yakov Roizin",

year = "2003",

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doi = "10.1063/1.1604182",

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AU - Levin, Igor

AU - Leapman, Richard D.

AU - Kovler, Mark

AU - Roizin, Yakov

PY - 2003/8/25

Y1 - 2003/8/25

N2 - A study was performed on radiation-induced nitrogen segregation during electron energy loss spectroscopy (EELS) of silicon oxide - nitride-oxide stacks. EELS in both scanning transmission electron microscopy (STEM) and fixed-probe TEM was used to measure the elemental profiles of Si, O and N in the stacks deposited on silicon. Results showed radiation-induced nitrogen segregation to both the SiOx/poly-Si and Si/SiOx interfaces.

AB - A study was performed on radiation-induced nitrogen segregation during electron energy loss spectroscopy (EELS) of silicon oxide - nitride-oxide stacks. EELS in both scanning transmission electron microscopy (STEM) and fixed-probe TEM was used to measure the elemental profiles of Si, O and N in the stacks deposited on silicon. Results showed radiation-induced nitrogen segregation to both the SiOx/poly-Si and Si/SiOx interfaces.

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DO - 10.1063/1.1604182

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SP - 1548

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Radiation-induced nitrogen segregation during electron energy loss spectroscopy of silicon oxide-nitride-oxide stacks

Abstract

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