Radiation-induced nitrogen segregation during electron energy loss spectroscopy of silicon oxide-nitride-oxide stacks

Igor Levin, Richard D. Leapman, Mark Kovler, Yakov Roizin

Research output: Contribution to journalArticlepeer-review

Abstract

A study was performed on radiation-induced nitrogen segregation during electron energy loss spectroscopy (EELS) of silicon oxide - nitride-oxide stacks. EELS in both scanning transmission electron microscopy (STEM) and fixed-probe TEM was used to measure the elemental profiles of Si, O and N in the stacks deposited on silicon. Results showed radiation-induced nitrogen segregation to both the SiOx/poly-Si and Si/SiOx interfaces.

Original languageEnglish
Pages (from-to)1548-1550
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number8
DOIs
StatePublished - 25 Aug 2003
Externally publishedYes

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