Radiation hardness of silicon detectors manufactured on oxygen and carbon enriched material

Arie Ruzin; Maurice Glaser; Francois Lemeilleur

doi:10.1117/12.366608

Radiation hardness of silicon detectors manufactured on oxygen and carbon enriched material

Arie Ruzin^*
, Maurice Glaser
, Francois Lemeilleur

^*Corresponding author for this work

CERN

Research output: Contribution to journal › Conference article › peer-review

Abstract

Recent results on the radiation hardness of silicon detectors fabricated on float zone bulk silicon enriched by carbon and oxygen are reported. The results indicate that the radiation hardness of silicon detectors can be determined by the concentration of oxygen and carbon atoms in the bulk material. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which is studying the radiation hardening of silicon detectors.

Original language	English
Pages (from-to)	415-423
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3768
DOIs	https://doi.org/10.1117/12.366608
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 Hard X-Ray, Gamma-Ray, and Neutron Detector Physics - Denver, CO, USA Duration: 19 Jul 1999 → 23 Jul 1999

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10.1117/12.366608

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title = "Radiation hardness of silicon detectors manufactured on oxygen and carbon enriched material",

abstract = "Recent results on the radiation hardness of silicon detectors fabricated on float zone bulk silicon enriched by carbon and oxygen are reported. The results indicate that the radiation hardness of silicon detectors can be determined by the concentration of oxygen and carbon atoms in the bulk material. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which is studying the radiation hardening of silicon detectors.",

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year = "1999",

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AU - Glaser, Maurice

AU - Lemeilleur, Francois

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N2 - Recent results on the radiation hardness of silicon detectors fabricated on float zone bulk silicon enriched by carbon and oxygen are reported. The results indicate that the radiation hardness of silicon detectors can be determined by the concentration of oxygen and carbon atoms in the bulk material. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which is studying the radiation hardening of silicon detectors.

AB - Recent results on the radiation hardness of silicon detectors fabricated on float zone bulk silicon enriched by carbon and oxygen are reported. The results indicate that the radiation hardness of silicon detectors can be determined by the concentration of oxygen and carbon atoms in the bulk material. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which is studying the radiation hardening of silicon detectors.

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1999 Hard X-Ray, Gamma-Ray, and Neutron Detector Physics

Y2 - 19 July 1999 through 23 July 1999

ER -

Radiation hardness of silicon detectors manufactured on oxygen and carbon enriched material

Abstract

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