Radiation hardness of silicon detectors manufactured on oxygen and carbon enriched material

Arie Ruzin*, Maurice Glaser, Francois Lemeilleur

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Recent results on the radiation hardness of silicon detectors fabricated on float zone bulk silicon enriched by carbon and oxygen are reported. The results indicate that the radiation hardness of silicon detectors can be determined by the concentration of oxygen and carbon atoms in the bulk material. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which is studying the radiation hardening of silicon detectors.

Original languageEnglish
Pages (from-to)415-423
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3768
DOIs
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1999 Hard X-Ray, Gamma-Ray, and Neutron Detector Physics - Denver, CO, USA
Duration: 19 Jul 199923 Jul 1999

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