Radiation hardness of foundry nvm technologies

Evgeny Pikhay*, Cristiano Calligaro, Yakov Roizin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review


As a specialty foundry, TowerJazz internally developed numerous NVM (Non-Volatile Memory) technologies and evaluated embedded Flash solutions of NVM IP vendors. This included One-Time Programmable (OTP) and Multi-Time Programmable (MTP) logic memories, nitride-based devices and emerging memory solutions, such as MRAM and ReRAM. This chapter summarizes the results obtained during several projects targeting radiation hardening of embedded memories. Special test structures designed to control the radiation influences on the core CMOS and memory devices are discussed. The distinguishing process features of radiation-hard foundry platforms are analyzed and physical mechanisms responsible for radiation hardness of NVM are specified, including the ways of performance improvement. The experience obtained in interaction with customers interested in radiation-hard applications is used for the analyses. In particular, sensors of radiation based on Floating Gate (FG) devices and their radiation immunity are presented in view of possible integration of rad-hard NVM devices and FG structures for radiation measurements at the same chip.

Original languageEnglish
Title of host publicationRad-hard Semiconductor Memories
PublisherRiver Publishers
Number of pages41
ISBN (Electronic)9788770220194
ISBN (Print)9788770220200
StatePublished - 31 Aug 2018
Externally publishedYes


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