TY - GEN
T1 - Radiation-hardened techniques for CMOS flash ADC
AU - Gatti, Umberto
AU - Calligaro, Cristiano
AU - Pikhay, Evgeny
AU - Roizin, Yakov
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2015/2/25
Y1 - 2015/2/25
N2 - This work presents a rad-hard 4-bit 10MHz Flash ADC for space applications. The converter has been developed using rad-hardened techniques both at architecture and layout levels. The design takes into account the different effects of the radiation that could damage the circuits in harsh environments. The ADC has been integrated in a standard CMOS 0.18-μm technology by TowerJazz. The prototype has been tested with a custom methodology and showed a Total Dose immunity up to 300krad.
AB - This work presents a rad-hard 4-bit 10MHz Flash ADC for space applications. The converter has been developed using rad-hardened techniques both at architecture and layout levels. The design takes into account the different effects of the radiation that could damage the circuits in harsh environments. The ADC has been integrated in a standard CMOS 0.18-μm technology by TowerJazz. The prototype has been tested with a custom methodology and showed a Total Dose immunity up to 300krad.
UR - http://www.scopus.com/inward/record.url?scp=84925440284&partnerID=8YFLogxK
U2 - 10.1109/ICECS.2014.7049906
DO - 10.1109/ICECS.2014.7049906
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AN - SCOPUS:84925440284
T3 - 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014
SP - 1
EP - 4
BT - 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014
Y2 - 7 December 2014 through 10 December 2014
ER -