Radiation effects on programmed NROM cells

D. Corso; A. Palermo; F. Palumbo; S. Libertino; S. Lombardo; M. Lisiansky; Y. Roizin

doi:10.1149/1.2956045

Radiation effects on programmed NROM cells

D. Corso^*, A. Palermo, F. Palumbo, S. Libertino, S. Lombardo, M. Lisiansky, Y. Roizin

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

NROM type non-volatile memories, having information charge stored in traps in silicon nitride layer, were subjected to different radiation sources in order to ascertain the radiation hardness. Fundamental device parameters, such as threshold voltage shift and current leakages were studied as function of the accumulated dose for gamma (⁶⁰Co) and Boron ions irradiations to emulate real radiation environments for space and avionics applications. Radiation tolerance of NROM cells was registered with a pronounced degradation for doses exceeding 50 Krad and 1×10¹⁰ B/cm² for gamma and Boron ions irradiations respectively.

Original language	English
Title of host publication	ECS Transactions - Microelectronics Technology and Devices - SBMicro 2008
Pages	311-317
Number of pages	7
Edition	1
DOIs	https://doi.org/10.1149/1.2956045
State	Published - 2008
Externally published	Yes
Event	23rd Symposium on Microelectronics Technology and Devices, SBMicro2008 - Gramado, Brazil Duration: 1 Sep 2008 → 4 Sep 2008

Publication series

Name	ECS Transactions
Number	1
Volume	14
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	23rd Symposium on Microelectronics Technology and Devices, SBMicro2008
Country/Territory	Brazil
City	Gramado
Period	1/09/08 → 4/09/08

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10.1149/1.2956045

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title = "Radiation effects on programmed NROM cells",

abstract = "NROM type non-volatile memories, having information charge stored in traps in silicon nitride layer, were subjected to different radiation sources in order to ascertain the radiation hardness. Fundamental device parameters, such as threshold voltage shift and current leakages were studied as function of the accumulated dose for gamma (60Co) and Boron ions irradiations to emulate real radiation environments for space and avionics applications. Radiation tolerance of NROM cells was registered with a pronounced degradation for doses exceeding 50 Krad and 1×1010 B/cm2 for gamma and Boron ions irradiations respectively.",

author = "D. Corso and A. Palermo and F. Palumbo and S. Libertino and S. Lombardo and M. Lisiansky and Y. Roizin",

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edition = "1",

note = "null ; Conference date: 01-09-2008 Through 04-09-2008",

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Corso, D, Palermo, A, Palumbo, F, Libertino, S, Lombardo, S, Lisiansky, M & Roizin, Y 2008, Radiation effects on programmed NROM cells. in ECS Transactions - Microelectronics Technology and Devices - SBMicro 2008. 1 edn, ECS Transactions, no. 1, vol. 14, pp. 311-317, 23rd Symposium on Microelectronics Technology and Devices, SBMicro2008, Gramado, Brazil, 1/09/08. https://doi.org/10.1149/1.2956045

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AU - Corso, D.

AU - Palermo, A.

AU - Palumbo, F.

AU - Libertino, S.

AU - Lombardo, S.

AU - Lisiansky, M.

AU - Roizin, Y.

PY - 2008

Y1 - 2008

N2 - NROM type non-volatile memories, having information charge stored in traps in silicon nitride layer, were subjected to different radiation sources in order to ascertain the radiation hardness. Fundamental device parameters, such as threshold voltage shift and current leakages were studied as function of the accumulated dose for gamma (60Co) and Boron ions irradiations to emulate real radiation environments for space and avionics applications. Radiation tolerance of NROM cells was registered with a pronounced degradation for doses exceeding 50 Krad and 1×1010 B/cm2 for gamma and Boron ions irradiations respectively.

AB - NROM type non-volatile memories, having information charge stored in traps in silicon nitride layer, were subjected to different radiation sources in order to ascertain the radiation hardness. Fundamental device parameters, such as threshold voltage shift and current leakages were studied as function of the accumulated dose for gamma (60Co) and Boron ions irradiations to emulate real radiation environments for space and avionics applications. Radiation tolerance of NROM cells was registered with a pronounced degradation for doses exceeding 50 Krad and 1×1010 B/cm2 for gamma and Boron ions irradiations respectively.

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Y2 - 1 September 2008 through 4 September 2008

ER -

Radiation effects on programmed NROM cells

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