Radiation effects in nitride read-only memories

S. Libertino*, D. Corso, G. Mur, A. Marino, F. Palumbo, F. Principato, G. Cannella, T. Schillaci, S. Giarusso, F. Celi, M. Lisiansky, Y. Roizin, S. Lombardo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We report on the influence of different types of radiation on the nitride read-only memories (NROM®). The memory cells were irradiated by light ions (Boron), X-rays and γ-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM® cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remained after γ or X irradiation for absorbed doses exceeding 50 krad(Si) and 100 krad(Si), respectively. For Boron irradiation, the programmed devices remained stable up to the fluence of 1011 ions/cm2 (equivalent to 1 Mrad(Si) of TID tolerance).

Original languageEnglish
Pages (from-to)1857-1860
Number of pages4
JournalMicroelectronics Reliability
Issue number9-11
StatePublished - Sep 2010
Externally publishedYes


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