TY - JOUR
T1 - Radiation effects in nitride read-only memories
AU - Libertino, S.
AU - Corso, D.
AU - Mur, G.
AU - Marino, A.
AU - Palumbo, F.
AU - Principato, F.
AU - Cannella, G.
AU - Schillaci, T.
AU - Giarusso, S.
AU - Celi, F.
AU - Lisiansky, M.
AU - Roizin, Y.
AU - Lombardo, S.
N1 - Funding Information:
This work has been supported by the binational project “Radiation Hard Electronic Systems for Space Application (RHESSA)” funded by the Ministero degli Esteri (Italy) and Israeli Ministry of Industry, and by PICT05-38255 and PICT07-01143 ANPCyT, Argentina.
PY - 2010/9
Y1 - 2010/9
N2 - We report on the influence of different types of radiation on the nitride read-only memories (NROM®). The memory cells were irradiated by light ions (Boron), X-rays and γ-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM® cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remained after γ or X irradiation for absorbed doses exceeding 50 krad(Si) and 100 krad(Si), respectively. For Boron irradiation, the programmed devices remained stable up to the fluence of 1011 ions/cm2 (equivalent to 1 Mrad(Si) of TID tolerance).
AB - We report on the influence of different types of radiation on the nitride read-only memories (NROM®). The memory cells were irradiated by light ions (Boron), X-rays and γ-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM® cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remained after γ or X irradiation for absorbed doses exceeding 50 krad(Si) and 100 krad(Si), respectively. For Boron irradiation, the programmed devices remained stable up to the fluence of 1011 ions/cm2 (equivalent to 1 Mrad(Si) of TID tolerance).
UR - http://www.scopus.com/inward/record.url?scp=84755161644&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2010.07.068
DO - 10.1016/j.microrel.2010.07.068
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AN - SCOPUS:84755161644
SN - 0026-2714
VL - 50
SP - 1857
EP - 1860
JO - Microelectronics Reliability
JF - Microelectronics Reliability
IS - 9-11
ER -