Quantum kinetics regime during and immediately after laser excitation of semiconductors

S. Bar-Ad; D. S. Chemla

doi:10.1016/S0921-5107(97)00085-8

Quantum kinetics regime during and immediately after laser excitation of semiconductors

S. Bar-Ad, D. S. Chemla^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated carrier dynamics in the semiconductor GaAs, during and just after creation by ≈30 fs laser pulses, much shorter than the phonon and plasma time scales. We observed a quasi-instantaneous spread of the carrier population in momentum-energy space, that is not even qualitatively consistent with Boltzmann kinetics. The observations are, however, in qualitative agreement with quantum kinetic theories of carrier-carrier and carrier-phonon scattering.

Original language	English
Pages (from-to)	83-87
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	48
Issue number	1-2
DOIs	https://doi.org/10.1016/S0921-5107(97)00085-8
State	Published - 1 Aug 1997
Externally published	Yes

Keywords

Quantum kinetics
Semiconductors
Short pulse spectroscopy
Thermalization

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10.1016/S0921-5107(97)00085-8

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title = "Quantum kinetics regime during and immediately after laser excitation of semiconductors",

abstract = "We investigated carrier dynamics in the semiconductor GaAs, during and just after creation by ≈30 fs laser pulses, much shorter than the phonon and plasma time scales. We observed a quasi-instantaneous spread of the carrier population in momentum-energy space, that is not even qualitatively consistent with Boltzmann kinetics. The observations are, however, in qualitative agreement with quantum kinetic theories of carrier-carrier and carrier-phonon scattering.",

keywords = "Quantum kinetics, Semiconductors, Short pulse spectroscopy, Thermalization",

author = "S. Bar-Ad and Chemla, {D. S.}",

note = "Funding Information: This work was performed by S. Bar-Ad, P. Kner, M.V. Marquezini, K. El Sayed and D.S. Chemla. It was supported by the Director, Office of Energy Research, Office of Basic Energy Sciences, Division of Material Sciences of the US Department of Energy, and the National Science Foundation. We also would like to thank A.V. Kuznetsov for very helpful discussions",

year = "1997",

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doi = "10.1016/S0921-5107(97)00085-8",

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AU - Bar-Ad, S.

AU - Chemla, D. S.

N1 - Funding Information: This work was performed by S. Bar-Ad, P. Kner, M.V. Marquezini, K. El Sayed and D.S. Chemla. It was supported by the Director, Office of Energy Research, Office of Basic Energy Sciences, Division of Material Sciences of the US Department of Energy, and the National Science Foundation. We also would like to thank A.V. Kuznetsov for very helpful discussions

PY - 1997/8/1

Y1 - 1997/8/1

N2 - We investigated carrier dynamics in the semiconductor GaAs, during and just after creation by ≈30 fs laser pulses, much shorter than the phonon and plasma time scales. We observed a quasi-instantaneous spread of the carrier population in momentum-energy space, that is not even qualitatively consistent with Boltzmann kinetics. The observations are, however, in qualitative agreement with quantum kinetic theories of carrier-carrier and carrier-phonon scattering.

AB - We investigated carrier dynamics in the semiconductor GaAs, during and just after creation by ≈30 fs laser pulses, much shorter than the phonon and plasma time scales. We observed a quasi-instantaneous spread of the carrier population in momentum-energy space, that is not even qualitatively consistent with Boltzmann kinetics. The observations are, however, in qualitative agreement with quantum kinetic theories of carrier-carrier and carrier-phonon scattering.

KW - Quantum kinetics

KW - Semiconductors

KW - Short pulse spectroscopy

KW - Thermalization

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JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-2

ER -

Quantum kinetics regime during and immediately after laser excitation of semiconductors

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Keywords

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