Quantum corrections to the resistance of Mo/Si multilayers

E. I. Buchstab; A. V. Butenko; N. Ya Fogel; V. G. Cherkasova; R. L. Rosenbaum

doi:10.1103/PhysRevB.50.10063

Quantum corrections to the resistance of Mo/Si multilayers

E. I. Buchstab^*, A. V. Butenko, N. Ya Fogel, V. G. Cherkasova, R. L. Rosenbaum

^*Corresponding author for this work

School of Physics and Astronomy

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16 Scopus citations

Abstract

We report on resistance and magnetoresistance measurements in multilayer Mo/Si samples at temperatures of 1.5-300 K and magnetic fields up to 6 T. The temperature dependence of the conductivity can be entirely described by quantum interference effects. The experimental results are compared with calculations of the quantum corrections due to weak localization, electron-electron interactions, and supeconducting fluctuations. The resistance shows a crossover from two-dimensional (2D) to 3D behavior when the temperature is increased.

Original language	English
Pages (from-to)	10063-10068
Number of pages	6
Journal	Physical Review B-Condensed Matter
Volume	50
Issue number	14
DOIs	https://doi.org/10.1103/PhysRevB.50.10063
State	Published - 1994

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abstract = "We report on resistance and magnetoresistance measurements in multilayer Mo/Si samples at temperatures of 1.5-300 K and magnetic fields up to 6 T. The temperature dependence of the conductivity can be entirely described by quantum interference effects. The experimental results are compared with calculations of the quantum corrections due to weak localization, electron-electron interactions, and supeconducting fluctuations. The resistance shows a crossover from two-dimensional (2D) to 3D behavior when the temperature is increased.",

author = "Buchstab, {E. I.} and Butenko, {A. V.} and Fogel, {N. Ya} and Cherkasova, {V. G.} and Rosenbaum, {R. L.}",

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AU - Rosenbaum, R. L.

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AB - We report on resistance and magnetoresistance measurements in multilayer Mo/Si samples at temperatures of 1.5-300 K and magnetic fields up to 6 T. The temperature dependence of the conductivity can be entirely described by quantum interference effects. The experimental results are compared with calculations of the quantum corrections due to weak localization, electron-electron interactions, and supeconducting fluctuations. The resistance shows a crossover from two-dimensional (2D) to 3D behavior when the temperature is increased.

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Quantum corrections to the resistance of Mo/Si multilayers

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