Profiling of deep traps in silicon oxide-nitride-oxide structures

M. Naich*, G. Rosenman, Ya Roizin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Thermally stimulated exoelectron emission has been applied for high-resolution depth profiling of traps in amorphous SiO2/Si 3N4/SiO2 (ONO) dielectric stacks used in silicon-oxide-nitride-oxide-silicon (SONOS) memory devices. It is shown that maximum density of traps responsible for charge storage in ONO structures is at the interface between top silicon oxide and silicon nitride in ONO.

Original languageEnglish
Pages (from-to)166-169
Number of pages4
JournalThin Solid Films
Volume471
Issue number1-2
DOIs
StatePublished - 2005

Funding

FundersFunder number
Israeli Ministry of Industry and Trade, Consortium of Emerging Dielectrics and Conductor Technologies

    Keywords

    • Deep traps
    • High-resolution depth profiling
    • Silicon oxide-nitride-oxide structures

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