@article{83faad9d7af94a4799dfe4a66e006db8,
title = "Profiling of deep traps in silicon oxide-nitride-oxide structures",
abstract = "Thermally stimulated exoelectron emission has been applied for high-resolution depth profiling of traps in amorphous SiO2/Si 3N4/SiO2 (ONO) dielectric stacks used in silicon-oxide-nitride-oxide-silicon (SONOS) memory devices. It is shown that maximum density of traps responsible for charge storage in ONO structures is at the interface between top silicon oxide and silicon nitride in ONO.",
keywords = "Deep traps, High-resolution depth profiling, Silicon oxide-nitride-oxide structures",
author = "M. Naich and G. Rosenman and Ya Roizin",
note = "Funding Information: This work was supported by the “MAGNET” program of the Chief Scientist Office at the Israeli Ministry of Industry and Trade, Consortium of Emerging Dielectrics and Conductor Technologies for the Semiconductor Industry.",
year = "2005",
doi = "10.1016/j.tsf.2004.06.147",
language = "אנגלית",
volume = "471",
pages = "166--169",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier B.V.",
number = "1-2",
}