Profiling of deep traps in silicon oxide-nitride-oxide structures

M. Naich; G. Rosenman; Ya Roizin

doi:10.1016/j.tsf.2004.06.147

Profiling of deep traps in silicon oxide-nitride-oxide structures

M. Naich^*, G. Rosenman, Ya Roizin

^*Corresponding author for this work

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Thermally stimulated exoelectron emission has been applied for high-resolution depth profiling of traps in amorphous SiO₂/Si ₃N₄/SiO₂ (ONO) dielectric stacks used in silicon-oxide-nitride-oxide-silicon (SONOS) memory devices. It is shown that maximum density of traps responsible for charge storage in ONO structures is at the interface between top silicon oxide and silicon nitride in ONO.

Original language	English
Pages (from-to)	166-169
Number of pages	4
Journal	Thin Solid Films
Volume	471
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2004.06.147
State	Published - 2005

Keywords

Deep traps
High-resolution depth profiling
Silicon oxide-nitride-oxide structures

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10.1016/j.tsf.2004.06.147

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title = "Profiling of deep traps in silicon oxide-nitride-oxide structures",

abstract = "Thermally stimulated exoelectron emission has been applied for high-resolution depth profiling of traps in amorphous SiO2/Si 3N4/SiO2 (ONO) dielectric stacks used in silicon-oxide-nitride-oxide-silicon (SONOS) memory devices. It is shown that maximum density of traps responsible for charge storage in ONO structures is at the interface between top silicon oxide and silicon nitride in ONO.",

keywords = "Deep traps, High-resolution depth profiling, Silicon oxide-nitride-oxide structures",

author = "M. Naich and G. Rosenman and Ya Roizin",

note = "Funding Information: This work was supported by the “MAGNET” program of the Chief Scientist Office at the Israeli Ministry of Industry and Trade, Consortium of Emerging Dielectrics and Conductor Technologies for the Semiconductor Industry.",

year = "2005",

doi = "10.1016/j.tsf.2004.06.147",

language = "אנגלית",

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journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

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T1 - Profiling of deep traps in silicon oxide-nitride-oxide structures

AU - Naich, M.

AU - Rosenman, G.

AU - Roizin, Ya

N1 - Funding Information: This work was supported by the “MAGNET” program of the Chief Scientist Office at the Israeli Ministry of Industry and Trade, Consortium of Emerging Dielectrics and Conductor Technologies for the Semiconductor Industry.

PY - 2005

Y1 - 2005

N2 - Thermally stimulated exoelectron emission has been applied for high-resolution depth profiling of traps in amorphous SiO2/Si 3N4/SiO2 (ONO) dielectric stacks used in silicon-oxide-nitride-oxide-silicon (SONOS) memory devices. It is shown that maximum density of traps responsible for charge storage in ONO structures is at the interface between top silicon oxide and silicon nitride in ONO.

AB - Thermally stimulated exoelectron emission has been applied for high-resolution depth profiling of traps in amorphous SiO2/Si 3N4/SiO2 (ONO) dielectric stacks used in silicon-oxide-nitride-oxide-silicon (SONOS) memory devices. It is shown that maximum density of traps responsible for charge storage in ONO structures is at the interface between top silicon oxide and silicon nitride in ONO.

KW - Deep traps

KW - High-resolution depth profiling

KW - Silicon oxide-nitride-oxide structures

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SP - 166

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JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Profiling of deep traps in silicon oxide-nitride-oxide structures

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Keywords

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