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Dive into the research topics of 'Process and device characterization of high voltage gallium arsenide P-i-N layers grown by an improved liquid phase epitaxy method'. Together they form a unique fingerprint.- Sort by
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G. Ashkinazi, Tz Hadas, B. Meyler, M. Nathan, L. Zolotarevski, O. Zolotarevski
Research output: Contribution to journal › Article › peer-review