Process and device characterization of high voltage gallium arsenide P-i-N layers grown by an improved liquid phase epitaxy method

G. Ashkinazi, Tz Hadas, B. Meyler, M. Nathan, L. Zolotarevski, O. Zolotarevski

Research output: Contribution to journalArticlepeer-review

Abstract

GaAs P-i-N layers with an i-region net doping of less than 1012 cm-3 were grown on P+ and N+ substrates by a modified liquid phase epitaxy (LPE) method. Doping profiles and structural data obtained by varius characterization techniques are presented and discussed. A P+-P-i-N-N+ diode with a 25 μm-wide i-region exhibits a breakdown voltage of ∼ 1000 V, a trr of ∼ 50 ns, and reverse current densities (at VR = 800 V) of - 3 × 10-6 A/cm2 at 25°C and ∼ 10-2 A/cm2 at 260° C.

Original languageEnglish
Pages (from-to)1749-1755
Number of pages7
JournalSolid-State Electronics
Volume36
Issue number12
DOIs
StatePublished - Dec 1993

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