TY - JOUR
T1 - Process and device characterization of high voltage gallium arsenide P-i-N layers grown by an improved liquid phase epitaxy method
AU - Ashkinazi, G.
AU - Hadas, Tz
AU - Meyler, B.
AU - Nathan, M.
AU - Zolotarevski, L.
AU - Zolotarevski, O.
N1 - Funding Information:
Acknowledgemenrs-Parstiuapl portf or this work came from the Ministry of sciencea nd Technology( grant # 3464-l-91a)n d the Ministryo f ImmigranAt bsorption. We wisht o thankD r Joseph van Zwarenf or his continued interesta nds upport,a ndMr D. Nir for technicaal ssistance.
PY - 1993/12
Y1 - 1993/12
N2 - GaAs P-i-N layers with an i-region net doping of less than 1012 cm-3 were grown on P+ and N+ substrates by a modified liquid phase epitaxy (LPE) method. Doping profiles and structural data obtained by varius characterization techniques are presented and discussed. A P+-P-i-N-N+ diode with a 25 μm-wide i-region exhibits a breakdown voltage of ∼ 1000 V, a trr of ∼ 50 ns, and reverse current densities (at VR = 800 V) of - 3 × 10-6 A/cm2 at 25°C and ∼ 10-2 A/cm2 at 260° C.
AB - GaAs P-i-N layers with an i-region net doping of less than 1012 cm-3 were grown on P+ and N+ substrates by a modified liquid phase epitaxy (LPE) method. Doping profiles and structural data obtained by varius characterization techniques are presented and discussed. A P+-P-i-N-N+ diode with a 25 μm-wide i-region exhibits a breakdown voltage of ∼ 1000 V, a trr of ∼ 50 ns, and reverse current densities (at VR = 800 V) of - 3 × 10-6 A/cm2 at 25°C and ∼ 10-2 A/cm2 at 260° C.
UR - http://www.scopus.com/inward/record.url?scp=0027887646&partnerID=8YFLogxK
U2 - 10.1016/0038-1101(93)90222-C
DO - 10.1016/0038-1101(93)90222-C
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AN - SCOPUS:0027887646
SN - 0038-1101
VL - 36
SP - 1749
EP - 1755
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 12
ER -