Probing the surface states in Bi 2Se 3 using the Shubnikov-de Haas effect

M. Petrushevsky, E. Lahoud, A. Ron, E. Maniv, I. Diamant, I. Neder, S. Wiedmann, V. K. Guduru, F. Chiappini, U. Zeitler, J. C. Maan, K. Chashka, A. Kanigel, Y. Dagan

Research output: Contribution to journalArticlepeer-review

Abstract

Shubnikov-de Haas oscillations are observed in Bi 2Se 3 flakes with high carrier concentration and low bulk mobility. These oscillations probe the protected surface states and enable us to extract their carrier concentration, effective mass, and Dingle temperature. The Fermi momentum obtained is in agreement with angle-resolved photoemission spectroscopy measurements performed on crystals from the same batch. We study the behavior of the Berry phase as a function of magnetic fields. The standard theoretical considerations fail to explain the observed behavior.

Original languageEnglish
Article number045131
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume86
Issue number4
DOIs
StatePublished - 26 Jul 2012

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