TY - JOUR
T1 - Pressure-induced metallization of ZnSe
AU - Itkin, Galit
AU - Hearne, Giovanni R.
AU - Sterer, Eran
AU - Pasternak, Moshe P.
AU - Potzel, Walter
PY - 1995
Y1 - 1995
N2 - High-pressure studies of the resistivity R of the direct-gap insulator ZnSe were carried out using diamond-anvil cells. The pressure dependence R(P) at 300 K in the pressure range of 020 GPa revealed a drastic drop in the resistance at P=13.5 GPa and upon decompression recovery of the insulating state at 10.5 GPa. From the temperature dependence of the resistance at P>13.5 GPa it has been concluded that (i) narrow-gap semiconducting and metallic phases coexist in the range 13.515 GPa, and (ii) a pure metallic state, characterized by a positive temperature slope and small resistivity value, exists at P>17 GPa. The results are discussed in terms of previous optical data and band-structure calculations.
AB - High-pressure studies of the resistivity R of the direct-gap insulator ZnSe were carried out using diamond-anvil cells. The pressure dependence R(P) at 300 K in the pressure range of 020 GPa revealed a drastic drop in the resistance at P=13.5 GPa and upon decompression recovery of the insulating state at 10.5 GPa. From the temperature dependence of the resistance at P>13.5 GPa it has been concluded that (i) narrow-gap semiconducting and metallic phases coexist in the range 13.515 GPa, and (ii) a pure metallic state, characterized by a positive temperature slope and small resistivity value, exists at P>17 GPa. The results are discussed in terms of previous optical data and band-structure calculations.
UR - http://www.scopus.com/inward/record.url?scp=0011993482&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.51.3195
DO - 10.1103/PhysRevB.51.3195
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AN - SCOPUS:0011993482
SN - 1098-0121
VL - 51
SP - 3195
EP - 3197
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
IS - 5
ER -