Pressure-induced metallization of ZnSe

Galit Itkin*, Giovanni R. Hearne, Eran Sterer, Moshe P. Pasternak, Walter Potzel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


High-pressure studies of the resistivity R of the direct-gap insulator ZnSe were carried out using diamond-anvil cells. The pressure dependence R(P) at 300 K in the pressure range of 020 GPa revealed a drastic drop in the resistance at P=13.5 GPa and upon decompression recovery of the insulating state at 10.5 GPa. From the temperature dependence of the resistance at P>13.5 GPa it has been concluded that (i) narrow-gap semiconducting and metallic phases coexist in the range 13.515 GPa, and (ii) a pure metallic state, characterized by a positive temperature slope and small resistivity value, exists at P>17 GPa. The results are discussed in terms of previous optical data and band-structure calculations.

Original languageEnglish
Pages (from-to)3195-3197
Number of pages3
JournalPhysical Review B-Condensed Matter
Issue number5
StatePublished - 1995


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