Pressure induced metallization of the antiferromagnetic-insulator Coi2

Eran Sterer; Moshe P. Pasternak

doi:10.1080/08957959208201456

Pressure induced metallization of the antiferromagnetic-insulator Coi2

Eran Sterer, Moshe P. Pasternak

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

High pressure electrical measurements were conducted in the antiferromagnetic insulator CoI2 using a miniature Diamond Anvil Cell (DAC). The existence of a Mott Transition predicted from high pressure 129I Massbauer Spectroscopy (MS)1 has been verified. At about 8 GPa the system becomes metallic as evidenced by the temperature behavior of the conductivity. The conductivity at room temperature, however, still increases with increasing pressure, leveling off at 11 GPa. The metallic behavior in the 8 -11 GPa is explained by coexistence of metallic and insulating clusters via a percolating process. Above 11 GPa the material is completely metallic. This mechanism is consistent with the MS findings.

Original language	English
Pages (from-to)	457-460
Number of pages	4
Journal	High Pressure Research
Volume	10
Issue number	1-2
DOIs	https://doi.org/10.1080/08957959208201456
State	Published - 1 May 1992

Keywords

Electrical resistivity
Mott transition
diamond anvil cells
high pressure
insulator-metal transition

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10.1080/08957959208201456

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@article{5667b12848af43feaf2b8cb84bd9858b,

title = "Pressure induced metallization of the antiferromagnetic-insulator Coi2",

abstract = "High pressure electrical measurements were conducted in the antiferromagnetic insulator CoI2 using a miniature Diamond Anvil Cell (DAC). The existence of a Mott Transition predicted from high pressure 129I Massbauer Spectroscopy (MS)1 has been verified. At about 8 GPa the system becomes metallic as evidenced by the temperature behavior of the conductivity. The conductivity at room temperature, however, still increases with increasing pressure, leveling off at 11 GPa. The metallic behavior in the 8 -11 GPa is explained by coexistence of metallic and insulating clusters via a percolating process. Above 11 GPa the material is completely metallic. This mechanism is consistent with the MS findings.",

keywords = "Electrical resistivity, Mott transition, diamond anvil cells, high pressure, insulator-metal transition",

author = "Eran Sterer and Pasternak, {Moshe P.}",

note = "Funding Information: Acknowledgement. This work was Isrdeli Basic Research Foundation.",

year = "1992",

month = may,

day = "1",

doi = "10.1080/08957959208201456",

language = "אנגלית",

volume = "10",

pages = "457--460",

journal = "High Pressure Research",

issn = "0895-7959",

publisher = "Taylor and Francis Ltd.",

number = "1-2",

}

TY - JOUR

T1 - Pressure induced metallization of the antiferromagnetic-insulator Coi2

AU - Sterer, Eran

AU - Pasternak, Moshe P.

N1 - Funding Information: Acknowledgement. This work was Isrdeli Basic Research Foundation.

PY - 1992/5/1

Y1 - 1992/5/1

N2 - High pressure electrical measurements were conducted in the antiferromagnetic insulator CoI2 using a miniature Diamond Anvil Cell (DAC). The existence of a Mott Transition predicted from high pressure 129I Massbauer Spectroscopy (MS)1 has been verified. At about 8 GPa the system becomes metallic as evidenced by the temperature behavior of the conductivity. The conductivity at room temperature, however, still increases with increasing pressure, leveling off at 11 GPa. The metallic behavior in the 8 -11 GPa is explained by coexistence of metallic and insulating clusters via a percolating process. Above 11 GPa the material is completely metallic. This mechanism is consistent with the MS findings.

AB - High pressure electrical measurements were conducted in the antiferromagnetic insulator CoI2 using a miniature Diamond Anvil Cell (DAC). The existence of a Mott Transition predicted from high pressure 129I Massbauer Spectroscopy (MS)1 has been verified. At about 8 GPa the system becomes metallic as evidenced by the temperature behavior of the conductivity. The conductivity at room temperature, however, still increases with increasing pressure, leveling off at 11 GPa. The metallic behavior in the 8 -11 GPa is explained by coexistence of metallic and insulating clusters via a percolating process. Above 11 GPa the material is completely metallic. This mechanism is consistent with the MS findings.

KW - Electrical resistivity

KW - Mott transition

KW - diamond anvil cells

KW - high pressure

KW - insulator-metal transition

UR - http://www.scopus.com/inward/record.url?scp=0027043027&partnerID=8YFLogxK

U2 - 10.1080/08957959208201456

DO - 10.1080/08957959208201456

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0027043027

VL - 10

SP - 457

EP - 460

JO - High Pressure Research

JF - High Pressure Research

SN - 0895-7959

IS - 1-2

ER -

Pressure induced metallization of the antiferromagnetic-insulator Coi2

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Keywords

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