Pressure induced metallization of the antiferromagnetic-insulator Coi2

Eran Sterer, Moshe P. Pasternak

Research output: Contribution to journalArticlepeer-review

Abstract

High pressure electrical measurements were conducted in the antiferromagnetic insulator CoI2 using a miniature Diamond Anvil Cell (DAC). The existence of a Mott Transition predicted from high pressure 129I Massbauer Spectroscopy (MS)1 has been verified. At about 8 GPa the system becomes metallic as evidenced by the temperature behavior of the conductivity. The conductivity at room temperature, however, still increases with increasing pressure, leveling off at 11 GPa. The metallic behavior in the 8 -11 GPa is explained by coexistence of metallic and insulating clusters via a percolating process. Above 11 GPa the material is completely metallic. This mechanism is consistent with the MS findings.

Original languageEnglish
Pages (from-to)457-460
Number of pages4
JournalHigh Pressure Research
Volume10
Issue number1-2
DOIs
StatePublished - 1 May 1992

Keywords

  • Electrical resistivity
  • Mott transition
  • diamond anvil cells
  • high pressure
  • insulator-metal transition

Fingerprint

Dive into the research topics of 'Pressure induced metallization of the antiferromagnetic-insulator Coi2'. Together they form a unique fingerprint.

Cite this