Plasma-induced charging in two bit per cell SONOS memories

Y. Roizin, M. Gutman, R. Yosefi, S. Alfassi, E. Aloni

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Plasma induced charging in oxide-nitride-oxide (ONO) stacks and its influence on device and reliability performance were investigated on microFlash® two bit per cell memory devices. Experimental data indicate that UV radiation combined with the voltage built-up at the electrodes is the main cause of the observed Vt increase. Charging effects are more pronounced for scaled down devices with narrow word lines. An enhanced narrow channel effect is shown to be related to negative charges trapped in the nitride of ONO at the edges of the memory cell. Charging leads to the degradation of retention properties and results in the increased Vt spread. To decrease ONO charging a complex of measures was implemented that included screening of problematic equipment, development of special protecting circuits and improvement of the device design.

Original languageEnglish
Title of host publication2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003
EditorsKoji Eriguchi, S. Krishnan, Terence Hook
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages61-64
Number of pages4
ISBN (Electronic)0780377478
DOIs
StatePublished - 2003
Externally publishedYes
Event2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003 - Corbeil-Essonnes, France
Duration: 24 Apr 200325 Apr 2003

Publication series

NameInternational Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
Volume2003-January

Conference

Conference2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003
Country/TerritoryFrance
CityCorbeil-Essonnes
Period24/04/0325/04/03

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