PLANARIZATION WITH SPIN-ON-GLASS/LPCVD COMPOSITE FILMS.

F. Dupuis; W. G. Oldham; Y. Shacham-Diamand

PLANARIZATION WITH SPIN-ON-GLASS/LPCVD COMPOSITE FILMS.

F. Dupuis^*, W. G. Oldham, Y. Shacham-Diamand

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A physical and electrical evaluation of the feasibility of planarization by means of composite films has been carried out. The use of even a very thin spin-on film underneath a conventional LPCVD PSG oxide film significantly improves the final topography. The electrical properties of the undoped PSG film are consistent with use in CMOS VLSI technologies.

Original language	English
Title of host publication	Digest of Technical Papers - Symposium on VLSI Technology
Publisher	Business Cent for Academic Soc Japan
Pages	52-53
Number of pages	2
ISBN (Print)	4930813093
State	Published - 1985
Externally published	Yes

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Cite this

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title = "PLANARIZATION WITH SPIN-ON-GLASS/LPCVD COMPOSITE FILMS.",

abstract = "A physical and electrical evaluation of the feasibility of planarization by means of composite films has been carried out. The use of even a very thin spin-on film underneath a conventional LPCVD PSG oxide film significantly improves the final topography. The electrical properties of the undoped PSG film are consistent with use in CMOS VLSI technologies.",

author = "F. Dupuis and Oldham, {W. G.} and Y. Shacham-Diamand",

year = "1985",

language = "אנגלית",

isbn = "4930813093",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Business Cent for Academic Soc Japan",

pages = "52--53",

booktitle = "Digest of Technical Papers - Symposium on VLSI Technology",

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PLANARIZATION WITH SPIN-ON-GLASS/LPCVD COMPOSITE FILMS. / Dupuis, F.; Oldham, W. G.; Shacham-Diamand, Y.

Digest of Technical Papers - Symposium on VLSI Technology. Business Cent for Academic Soc Japan, 1985. p. 52-53 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - PLANARIZATION WITH SPIN-ON-GLASS/LPCVD COMPOSITE FILMS.

AU - Dupuis, F.

AU - Oldham, W. G.

AU - Shacham-Diamand, Y.

PY - 1985

Y1 - 1985

N2 - A physical and electrical evaluation of the feasibility of planarization by means of composite films has been carried out. The use of even a very thin spin-on film underneath a conventional LPCVD PSG oxide film significantly improves the final topography. The electrical properties of the undoped PSG film are consistent with use in CMOS VLSI technologies.

AB - A physical and electrical evaluation of the feasibility of planarization by means of composite films has been carried out. The use of even a very thin spin-on film underneath a conventional LPCVD PSG oxide film significantly improves the final topography. The electrical properties of the undoped PSG film are consistent with use in CMOS VLSI technologies.

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M3 - פרסום בספר כנס

AN - SCOPUS:0022313922

SN - 4930813093

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 52

EP - 53

BT - Digest of Technical Papers - Symposium on VLSI Technology

PB - Business Cent for Academic Soc Japan

ER -

PLANARIZATION WITH SPIN-ON-GLASS/LPCVD COMPOSITE FILMS.

Abstract

Publication series

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