Picosecond electron transfer from photosynthetic reaction center protein to GaAs

Lior Sepunaru; Irena Tsimberov; Ludmila Forolov; Chanoch Carmeli; Itai Carmeli; Yossi Rosenwaks

doi:10.1021/nl901262h

Picosecond electron transfer from photosynthetic reaction center protein to GaAs

Lior Sepunaru, Irena Tsimberov, Ludmila Forolov, Chanoch Carmeli, Itai Carmeli^*, Yossi Rosenwaks

^*Corresponding author for this work

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

An extremely fast electron transfer through an electronically coupled junction between covalently bound oriented photosynthetic reaction center protein photosystem I (PS I) and n-GaAs was measured by time-resolved photoluminescence. It was found that the n-GaAs band edge luminescence intensity increased by a factor of 2, and the fast exponential decay constant was increased by a factor of 2.6 following the PS I self-assembly. We attribute this to picosecond electron transfer from the PS I to the n-GaAs surface states.

Original language	English
Pages (from-to)	2751-2755
Number of pages	5
Journal	Nano Letters
Volume	9
Issue number	7
DOIs	https://doi.org/10.1021/nl901262h
State	Published - 8 Jul 2009

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10.1021/nl901262h

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abstract = "An extremely fast electron transfer through an electronically coupled junction between covalently bound oriented photosynthetic reaction center protein photosystem I (PS I) and n-GaAs was measured by time-resolved photoluminescence. It was found that the n-GaAs band edge luminescence intensity increased by a factor of 2, and the fast exponential decay constant was increased by a factor of 2.6 following the PS I self-assembly. We attribute this to picosecond electron transfer from the PS I to the n-GaAs surface states.",

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AU - Sepunaru, Lior

AU - Tsimberov, Irena

AU - Forolov, Ludmila

AU - Carmeli, Chanoch

AU - Carmeli, Itai

AU - Rosenwaks, Yossi

PY - 2009/7/8

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N2 - An extremely fast electron transfer through an electronically coupled junction between covalently bound oriented photosynthetic reaction center protein photosystem I (PS I) and n-GaAs was measured by time-resolved photoluminescence. It was found that the n-GaAs band edge luminescence intensity increased by a factor of 2, and the fast exponential decay constant was increased by a factor of 2.6 following the PS I self-assembly. We attribute this to picosecond electron transfer from the PS I to the n-GaAs surface states.

AB - An extremely fast electron transfer through an electronically coupled junction between covalently bound oriented photosynthetic reaction center protein photosystem I (PS I) and n-GaAs was measured by time-resolved photoluminescence. It was found that the n-GaAs band edge luminescence intensity increased by a factor of 2, and the fast exponential decay constant was increased by a factor of 2.6 following the PS I self-assembly. We attribute this to picosecond electron transfer from the PS I to the n-GaAs surface states.

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Picosecond electron transfer from photosynthetic reaction center protein to GaAs

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