Picosecond electron transfer from photosynthetic reaction center protein to GaAs

Lior Sepunaru, Irena Tsimberov, Ludmila Forolov, Chanoch Carmeli, Itai Carmeli, Yossi Rosenwaks

Research output: Contribution to journalArticlepeer-review

Abstract

An extremely fast electron transfer through an electronically coupled junction between covalently bound oriented photosynthetic reaction center protein photosystem I (PS I) and n-GaAs was measured by time-resolved photoluminescence. It was found that the n-GaAs band edge luminescence intensity increased by a factor of 2, and the fast exponential decay constant was increased by a factor of 2.6 following the PS I self-assembly. We attribute this to picosecond electron transfer from the PS I to the n-GaAs surface states.

Original languageEnglish
Pages (from-to)2751-2755
Number of pages5
JournalNano Letters
Volume9
Issue number7
DOIs
StatePublished - 8 Jul 2009

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