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Photon assisted growth of HgTe by metalorganic chemical vapor deposition
A. Ruzin
*
, Y. Nemirovsky
*
Corresponding author for this work
Technion-Israel Institute of Technology
Research output
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Contribution to journal
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Article
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peer-review
3
Scopus citations
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Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
Photon-assisted
100%
HgTe
100%
Growth Rate
25%
Cadmium Telluride
25%
Mercury
25%
Kinetic Model
25%
Gas Phase
25%
Helium
25%
Activation Energy
25%
Pyrolysis
25%
Apparent Activation Energy
25%
Chemical Vapor Deposition Growth
25%
Sub-atmospheric Pressure
25%
Partial Pressure
25%
Susceptor
25%
Carrier Gas
25%
Thickness Uniformity
25%
Engineering
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Mols
100%
Experimental Result
33%
Limiting Case
33%
Gas-Phase
33%
Kinetic Model
33%
Activation Energy
33%
Pyrolysis
33%
Partial Pressure
33%
Carrier Gas
33%
Apparent Activation Energy
33%
Susceptor
33%
Material Science
Chemical Vapor Deposition
100%
Activation Energy
66%
Chemical Engineering
Metallorganic Chemical Vapor Deposition
100%
Pyrolysis
33%
Chemical Kinetics Characteristics
33%