TY - JOUR
T1 - Photoemission efficiency and persistence of (Cs, F) and (Cs, O) activated GaAs(110)
AU - Weissman, E.
AU - Shapira, Y.
PY - 1990
Y1 - 1990
N2 - We have recently reported on a novel negative electron affinity (NEA) photoemitter based on GaAs (110) activated by NF3 gas treatment and Cs deposition. We report on the results obtained from this activation and compare the results to (Cs, O) activation by conventional techniques on the same surface. The initial GaAs(110) surface is obtained by air cleaving in situ 600°C heat treatment. The photoemission yields, using near bandgap photons, are similar for both (Cs, O) and (Cs, F), indicating a common mechanism. As soon as Cs supply is terminated, the photoemission efficiency changes in two steps: the first is slow and is attributed to Cs desorption and the second is apparently due to ambient gas adsorption.
AB - We have recently reported on a novel negative electron affinity (NEA) photoemitter based on GaAs (110) activated by NF3 gas treatment and Cs deposition. We report on the results obtained from this activation and compare the results to (Cs, O) activation by conventional techniques on the same surface. The initial GaAs(110) surface is obtained by air cleaving in situ 600°C heat treatment. The photoemission yields, using near bandgap photons, are similar for both (Cs, O) and (Cs, F), indicating a common mechanism. As soon as Cs supply is terminated, the photoemission efficiency changes in two steps: the first is slow and is attributed to Cs desorption and the second is apparently due to ambient gas adsorption.
UR - http://www.scopus.com/inward/record.url?scp=0025540102&partnerID=8YFLogxK
U2 - 10.1016/0042-207X(90)93846-B
DO - 10.1016/0042-207X(90)93846-B
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AN - SCOPUS:0025540102
SN - 0042-207X
VL - 41
SP - 1006
EP - 1008
JO - Vacuum
JF - Vacuum
IS - 4-6
ER -