TY - JOUR
T1 - Perspective of spintronics applications based on the extraordinary hall effect
AU - Gerber, Alexander
AU - Riss, Ofir
PY - 2008/3
Y1 - 2008/3
N2 - Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltage proportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly selected spin-orbit scattering events. Already achieved sensitivity of the EHE-based sample devices exceeds 1000 Ω/T, which surpasses the sensitivity of semiconducting Hall sensors. Linear field response, thermal stability, high frequency operation, sub-micron dimensions and, above all, simplicity, robustness and low cost manufacture are good reasons to consider a wide scale technological application of the phenomenon for magnetic sensors and memory devices.
AB - Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltage proportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly selected spin-orbit scattering events. Already achieved sensitivity of the EHE-based sample devices exceeds 1000 Ω/T, which surpasses the sensitivity of semiconducting Hall sensors. Linear field response, thermal stability, high frequency operation, sub-micron dimensions and, above all, simplicity, robustness and low cost manufacture are good reasons to consider a wide scale technological application of the phenomenon for magnetic sensors and memory devices.
KW - Extraordinary hall effect
KW - Magnetic sensors and memory
KW - Spintronics
UR - http://www.scopus.com/inward/record.url?scp=58049200481&partnerID=8YFLogxK
U2 - 10.1166/jno.2008.005
DO - 10.1166/jno.2008.005
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.systematicreview???
AN - SCOPUS:58049200481
VL - 3
SP - 35
EP - 43
JO - Journal of Nanoelectronics and Optoelectronics
JF - Journal of Nanoelectronics and Optoelectronics
SN - 1555-130X
IS - 1
ER -