Perspective of spintronics applications based on the extraordinary hall effect

Alexander Gerber, Ofir Riss

Research output: Contribution to journalReview articlepeer-review

Abstract

Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltage proportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly selected spin-orbit scattering events. Already achieved sensitivity of the EHE-based sample devices exceeds 1000 Ω/T, which surpasses the sensitivity of semiconducting Hall sensors. Linear field response, thermal stability, high frequency operation, sub-micron dimensions and, above all, simplicity, robustness and low cost manufacture are good reasons to consider a wide scale technological application of the phenomenon for magnetic sensors and memory devices.

Original languageEnglish
Pages (from-to)35-43
Number of pages9
JournalJournal of Nanoelectronics and Optoelectronics
Volume3
Issue number1
DOIs
StatePublished - Mar 2008

Keywords

  • Extraordinary hall effect
  • Magnetic sensors and memory
  • Spintronics

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