Performance of tantalum-silicon-nitride diffusion barriers between copper and silicon dioxide

M. S. Angyal*, Y. Shacham-Diamand, J. S. Reid, M. A. Nicolet

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

52 Scopus citations

Abstract

Amorphous, 10-nm-thick tantalum-silicon-nitride (TaSiN) layers were found to be effective diffusion barriers between copper and thermal silicon dioxide. The films were electrically evaluated using TaSiN/Cu/TaSiN-oxide-silicon capacitors and bias thermal stress (BTS) treatments; the capacitors were stressed at 300°C with electric fields in excess of 1 MV/cm for up to 80 h. High frequency capacitance versus voltage characteristics were recorded at room temperature before and after BTS treatment. Based upon comparisons between these (C-V) curves, barrier failure was concluded to have not occurred.

Original languageEnglish
Pages (from-to)2152
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - 1995
Externally publishedYes

Fingerprint

Dive into the research topics of 'Performance of tantalum-silicon-nitride diffusion barriers between copper and silicon dioxide'. Together they form a unique fingerprint.

Cite this