Abstract
Amorphous, 10-nm-thick tantalum-silicon-nitride (TaSiN) layers were found to be effective diffusion barriers between copper and thermal silicon dioxide. The films were electrically evaluated using TaSiN/Cu/TaSiN-oxide-silicon capacitors and bias thermal stress (BTS) treatments; the capacitors were stressed at 300°C with electric fields in excess of 1 MV/cm for up to 80 h. High frequency capacitance versus voltage characteristics were recorded at room temperature before and after BTS treatment. Based upon comparisons between these (C-V) curves, barrier failure was concluded to have not occurred.
Original language | English |
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Pages (from-to) | 2152 |
Number of pages | 1 |
Journal | Applied Physics Letters |
Volume | 67 |
DOIs | |
State | Published - 1995 |
Externally published | Yes |