Performance characterization of III-V power devices

A. Stopel, M. Leibovitch, Yoram Shapira

Research output: Contribution to journalArticlepeer-review


The power performance of GaAs/AlGaAs pseudomorphic high electron mobility transistors (PHEMTs) has been modeled by using the statistical Design of Experiment approach. Empirical models for the small signal gain, output power and power added efficiency have been developed. The "walk-out/in" phenomenon has been observed in the devices as a result of power measurements. The evolution of surface photovoltage spectra after RF power stress indicates accumulation of positive electrical charge in the buffer and the surface layer of the devices.

Original languageEnglish
Pages (from-to)1872-1877
Number of pages6
JournalMicroelectronic Engineering
Issue number9
StatePublished - Sep 2008


  • Breakdown
  • High power amplifier
  • Impact ionization
  • Power performance
  • Power transistor


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