Performance characterization of III-V power devices

A. Stopel; M. Leibovitch; Yoram Shapira

doi:10.1016/j.mee.2008.05.033

Performance characterization of III-V power devices

A. Stopel^*, M. Leibovitch, Yoram Shapira

^*Corresponding author for this work

Department of Electrical Engineering - Physical Eng.

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

Abstract

The power performance of GaAs/AlGaAs pseudomorphic high electron mobility transistors (PHEMTs) has been modeled by using the statistical Design of Experiment approach. Empirical models for the small signal gain, output power and power added efficiency have been developed. The "walk-out/in" phenomenon has been observed in the devices as a result of power measurements. The evolution of surface photovoltage spectra after RF power stress indicates accumulation of positive electrical charge in the buffer and the surface layer of the devices.

Original language	English
Pages (from-to)	1872-1877
Number of pages	6
Journal	Microelectronic Engineering
Volume	85
Issue number	9
DOIs	https://doi.org/10.1016/j.mee.2008.05.033
State	Published - Sep 2008

Keywords

Breakdown
High power amplifier
Impact ionization
Power performance
Power transistor

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10.1016/j.mee.2008.05.033

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author = "A. Stopel and M. Leibovitch and Yoram Shapira",

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AB - The power performance of GaAs/AlGaAs pseudomorphic high electron mobility transistors (PHEMTs) has been modeled by using the statistical Design of Experiment approach. Empirical models for the small signal gain, output power and power added efficiency have been developed. The "walk-out/in" phenomenon has been observed in the devices as a result of power measurements. The evolution of surface photovoltage spectra after RF power stress indicates accumulation of positive electrical charge in the buffer and the surface layer of the devices.

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KW - High power amplifier

KW - Impact ionization

KW - Power performance

KW - Power transistor

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JO - Microelectronic Engineering

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Performance characterization of III-V power devices

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Keywords

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