Patterned electron emitters were fabricated using LiNbO3 (LN) single crystals and their characteristics were investigated for electron-beam lithography applications. Pyroelectrically induced electron emission was suppressed by coating Pt and Ti thin films. However, the electron emission behaviors were not affected by the deposition of SiO2 dielectric layers. Based on these observations, a structure of patterned emitters was suggested; Ti layers and SiO2 layers were used as blocking layers and emission layers, respectively. By using a 1:1 electron beam projection system, 100 μm and 5 μm dots on the exposed resist were obtained from 300 μm and 30 μm dots on emitters. Reduction of patterns might be useful in obtaining fine patterns without complex electron optics.
- 1:1 electron beam projection
- Patterned electron emitter