Parallel magnetoresistance of a polycrystalline bismuth film in high magnetic fields

Ralph Rosenbaum*, Jean Galibert

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Magnetoresistance (MR) ratios r = R(B)/R(0) have been measured in parallel fields on a polycrystalline heat-treated bismuth film at different temperatures. MR ratios vs. B's exhibit "maximums" followed by decreases, described by a B-1 law. Electron Fermi energies have been extracted. The MR data are explained using a Landau tube "sweeping" model and a MR expression of Pippard and of Fawcett. There is a second maximum in the MR ratios at 38 T followed by a second decrease. This second decrease could arise from the "sweeping" of the next lowest Landau tubes outside the Fermi surface of the single hole pocket.

Original languageEnglish
Pages (from-to)291-295
Number of pages5
JournalPhysica B: Condensed Matter
Volume346-347
Issue number1-4
DOIs
StatePublished - 30 Apr 2004
EventProceedings of the 7th International Symposium on Research - Toulouse, France
Duration: 20 Jul 200323 Jul 2003

Keywords

  • Bismuth films
  • Electronic transport in parallel magnetic fields
  • Magnetoresistance

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