p-channel MIS double-metal process InSb monolithic unit cell for infrared imaging

Avishai Kepten*, Yosef Y. Shacham-Diamand, S. E. Schacham

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A new approach to the fabrication of monolithic infrared focal plane arrays is presented and examined in this paper. The array is based on photovoltaic diodes, parallel integration capacitors, and MIS field effect transistors (FET). The photodiode is connected directly to the integrating capacitor while the MISFET serves as a pass gate to the video line. This configuration is operated in the pseudo-staring mode. The array was implemented in InSb, in a process based on a new passivation in which a photo chemical oxidation of InSb is followed by a conventional photo chemical SiO2 growth. A two-level metallization process was developed serving both for electrical connection and optical coverage. Two configurations were tested for the layout of the two metal layers. In addition, the lower metallization was implemented in Cr, Ti, and Al. The optimal structure is a planar array with Cr as the first metal layer which forms the source and drain contacts.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages305-316
Number of pages12
ISBN (Print)0819408506
StatePublished - 1992
Externally publishedYes
EventInfrared Detectors and Focal Plane Arrays II - Orlando, FL, USA
Duration: 23 Apr 199224 Apr 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1685
ISSN (Print)0277-786X

Conference

ConferenceInfrared Detectors and Focal Plane Arrays II
CityOrlando, FL, USA
Period23/04/9224/04/92

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